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High-efficiency, low-loss power conversion solution
TO-247-4Produttore:
Wolfspeed, Inc.
ProduttorePart #:
C3M0065100K
Scheda dati:
Pbfree Code:
Yes
Part Life Cycle Code:
Active
Reach Compliance Code:
compliant
Avalanche Energy Rating (Eas):
110 mJ
EDA/CAD Modelli:
Compila il breve modulo sottostante e ti forniremo immediatamente il preventivo.
Product C3M0065100K is a MOSFET transistor with an N-channel design. It has a continuous drain current (Id) of 35A and a drain-source voltage (Vds) of 1kV, making it suitable for high power applications. The on resistance (Rds(on)) is rated at 0.065ohm, with a test voltage (Vgs) of 15V. The threshold voltage (Vgs) is 2.1V, ensuring efficient operation and performance. This MOSFET is designed for reliability and durability in demanding environments
Pbfree Code | Yes | Part Life Cycle Code | Active |
Reach Compliance Code | compliant | Avalanche Energy Rating (Eas) | 110 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 1000 V | Drain Current-Max (ID) | 35 A |
Drain-source On Resistance-Max | 0.078 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-247 | JESD-30 Code | R-PSFM-T4 |
Number of Elements | 1 | Number of Terminals | 4 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Min | -55 °C |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 90 A | Reference Standard | IEC-60747-8-4 |
Surface Mount | NO | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING | Transistor Element Material | SILICON CARBIDE |
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Prodotto 365 giorni
Qualità garantita
Promettiamo di fornire un servizio di garanzia della qualità di 365 giorni per tutti i nostri prodotti.
Qtà. | Prezzo unitario | Est. Prezzo |
---|---|---|
1+ | $7,506 | $7,51 |
10+ | $6,632 | $66,32 |
30+ | $6,099 | $182,97 |
100+ | $5,653 | $565,30 |
I prezzi sottostanti sono solo di riferimento.
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