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Mosfet for low voltage applications, with a maximum rating of 1
TO-247-4Produttore:
WOLFSPEED, INC.
ProduttorePart #:
C3M0021120K
Scheda dati:
Part Life Cycle Code:
Active
Reach Compliance Code:
compliant
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
EDA/CAD Modelli:
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The C3M0021120K from Wolfspeed, a Cree Company, represents the next generation of silicon carbide power MOSFETs, delivering exceptional performance in a compact, lightweight package. Its high power handling capabilities, combined with its ability to operate at high temperatures, make it an ideal choice for demanding applications in renewable energy, electric vehicles, and beyond. With its low gate charge and capacitance, this MOSFET enables rapid switching speeds and reduced switching losses, further solidifying its position as a top-of-the-line solution for modern power electronics needs
Part Life Cycle Code | Active | Reach Compliance Code | compliant |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 1200 V | Drain Current-Max (ID) | 100 A |
Drain-source On Resistance-Max | 0.0288 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-247 | JESD-30 Code | R-PSFM-T4 |
Number of Elements | 1 | Number of Terminals | 4 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
Operating Temperature-Min | -40 °C | Polarity/Channel Type | N-CHANNEL |
Pulsed Drain Current-Max (IDM) | 200 A | Reference Standard | IEC-60747-8-4 |
Surface Mount | NO | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Application | SWITCHING |
Transistor Element Material | SILICON CARBIDE |
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Prodotto 365 giorni
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Qtà. | Prezzo unitario | Est. Prezzo |
---|---|---|
1+ | $31,138 | $31,14 |
30+ | $29,906 | $897,18 |
I prezzi sottostanti sono solo di riferimento.
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