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G3 SiC technology used in the manufacturing of this MOSFET
TO-247-3Produttore:
Wolfspeed, Inc.
ProduttorePart #:
C3M0032120D
Scheda dati:
Part Life Cycle Code:
Active
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
1200 V
EDA/CAD Modelli:
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One of the standout features of the C3M0032120D module is its compact and lightweight design, which allows for seamless integration into existing systems. Furthermore, its low switching loss and high thermal conductivity contribute to improved overall system efficiency and reduced heat generation. The wide operating temperature range of -40°C to 175°C ensures reliable performance even in the harshest environments
Part Life Cycle Code | Active | Reach Compliance Code | |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 1200 V | Drain Current-Max (ID) | 63 A |
Drain-source On Resistance-Max | 0.043 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 8 pF | JEDEC-95 Code | TO-247 |
JESD-30 Code | R-PSFM-T3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 175 °C | Operating Temperature-Min | -40 °C |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 283 W | Pulsed Drain Current-Max (IDM) | 120 A |
Reference Standard | IEC-60747-8-4 | Surface Mount | NO |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | SWITCHING |
Transistor Element Material | SILICON CARBIDE |
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Prodotto 365 giorni
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Promettiamo di fornire un servizio di garanzia della qualità di 365 giorni per tutti i nostri prodotti.
Qtà. | Prezzo unitario | Est. Prezzo |
---|---|---|
1+ | $21,805 | $21,80 |
10+ | $20,950 | $209,50 |
30+ | $19,465 | $583,95 |
90+ | $18,173 | $1.635,57 |
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