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650V N-Channel SiC Transistor with 49A Current Rating in TO-247 Package
TO-247-4LProduttore:
Wolfspeed
ProduttorePart #:
C3M0045065K
Scheda dati:
Technology:
SiC
Mounting Style:
Through Hole
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
EDA/CAD Modelli:
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Meet your high-performance power management needs with C3M0045065K, a Silicon Carbide Power MOSFET produced by Wolfspeed, a Cree Company. The C3M0065100K model features a drain-source voltage rating of 650V and a continuous drain current of 31A, making it a reliable choice for high-frequency power electronic applications. Its low on-resistance, fast switching speeds, and low switching losses make it suitable for a wide range of applications including motor drives, power supplies, and inverters. The MOSFET's compact and efficient design minimizes space requirements and maximizes power density, while its TO-247-4 package ensures long-term durability. Operating at a maximum temperature of 150°C and featuring a built-in temperature sensor for monitoring and protection purposes, this device offers reliability and performance for your power management needs
Product Category | MOSFET | Technology | SiC |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 650 V |
Id - Continuous Drain Current | 49 A | Rds On - Drain-Source Resistance | 45 mOhms |
Vgs - Gate-Source Voltage | - 8 V, + 19 V | Vgs th - Gate-Source Threshold Voltage | 3.6 V |
Qg - Gate Charge | 63 nC | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 176 W |
Channel Mode | Enhancement | Configuration | Single |
Fall Time | 6 ns | Product Type | MOSFET |
Rise Time | 12 ns | Factory Pack Quantity | 30 |
Subcategory | MOSFETs | Typical Turn-Off Delay Time | 20 ns |
Typical Turn-On Delay Time | 9 ns | Unit Weight | 0.211644 oz |
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