Metodo di pagamento
![hsbc](/img/service-policies-hsbc.png)
![paypal](/img/service-policies-paypal.png)
![wu](/img/service-policies-wu.png)
![mg](/img/service-policies-mg.png)
This product, labeled as 2N7002KT7G, is a N-type Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) suitable for switching applications
TO-236-3,SC-59,SOT-23-3Produttore:
onsemi
ProduttorePart #:
2N7002KT7G
Scheda dati:
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
320mA (Ta)
EDA/CAD Modelli:
Invia tutte le distinte materiali a
[email protected],
oppure compila il modulo sottostante per un preventivo su 2N7002KT7G. Risposta garantita entro
12hr.
Compila il breve modulo sottostante e ti forniremo immediatamente il preventivo.
The 2N7002KT7G from ON Semiconductor is a powerful N-channel enhancement mode Field-Effect Transistor (FET) designed for use in a wide range of electronic devices. With a maximum drain-source voltage (Vds) of 60V, this FET is capable of handling low power, high speed switching applications with ease. Its maximum drain current (Id) of 300mA makes it suitable for use in many low voltage applications, while its low on-resistance (Rds(on)) of 5 ohms ensures efficient switching and minimal power loss. Housed in a compact SOT-23 package, this FET is perfect for space-constrained applications where board space is limited. Additionally, with a gate threshold voltage (Vgs(th)) of 1 to 2.5V, the 2N7002KT7G can be easily driven by most logic level signals, making it extremely versatile. Furthermore, its fast switching speed and low gate charge make it ideal for high frequency applications, ensuring reliable and efficient performance
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V | Current - Continuous Drain (Id) @ 25°C | 320mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 1.6Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 0.7 nC @ 4.5 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 24.5 pF @ 20 V |
Power Dissipation (Max) | 300mW (Ta) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | 2N7002 |
Relativi al servizio post-vendita e alla liquidazione
Metodo di pagamento
Per canali di pagamento alternativi, contattaci a:
[email protected]metodo di spedizione
AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..
Prodotto 365 giorni
Qualità garantita
Promettiamo di fornire un servizio di garanzia della qualità di 365 giorni per tutti i nostri prodotti.
Qtà. | Prezzo unitario | Est. Prezzo |
---|---|---|
1+ | - | - |
I prezzi sottostanti sono solo di riferimento.
2N2222
Stmicroelectronics
1000+ $0,587
BC547
Onsemi
NPN Epitaxial Silicon Transistor
ULN2003
Onsemi
Versatile device for driving heavy loads and motor
IRF3205
Infineon
TO-220AB Tube Power Transistor with N-Channel Silicon
TAN15
Microchip
The TAN is a robust NPN transistor designed for high-frequency applications, capable of operating at up to V and continuous curren