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2N4392 +BOM

JFET N-Channel 40 V 1.8 W Through Hole TO-18

Produttore:

Central Semiconductor
ProduttorePart #:

2N4392
Scheda dati:

2N4392 Scheda dati (PDF)
FET Type:

N-Channel
Voltage - Breakdown (V(BR)GSS):

40 V
Current - Drain (Idss) @ Vds (Vgs=0):

25 mA @ 20 V
Voltage - Cutoff (VGS Off) @ Id:

2 V @ 1 nA
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per 2N4392

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2N4392 Descrizione generale

The 2N4392 is a N-channel JFET (Junction Field-Effect Transistor) typically used in low-power, high-frequency amplifier and switching applications.

Caratteristiche principali

Type: It is an N-channel JFET, meaning it is a three-terminal device with a gate, source, and drain.
Voltage Rating: It typically has a maximum drain-source voltage (VDS) rating of around 25 volts.
Current Rating: The maximum drain current (ID) rating is typically in the range of a few milliamperes.
Low Noise: It is known for its low noise characteristics, making it suitable for applications that require high-fidelity amplification.
High Input Impedance: The input impedance is typically very high, making it suitable for applications where a high input impedance is required.
Switching Speed: The device has a relatively fast switching speed, allowing it to quickly turn on and off in switching applications.
Application: It is commonly used in audio amplifiers, high-frequency oscillators, mixers, and other applications where low noise and high input impedance are desired.

Specifiche

Category	Discrete Semiconductor ProductsTransistorsJFETs	Series	-
FET Type	N-Channel	Voltage - Breakdown (V(BR)GSS)	40 V
Current - Drain (Idss) @ Vds (Vgs=0)	25 mA @ 20 V	Voltage - Cutoff (VGS off) @ Id	2 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds	14pF @ 20V	Resistance - RDS(On)	60 Ohms
Power - Max	1.8 W	Operating Temperature	-55°C ~ 125°C (TJ)
Mounting Type	Through Hole	Base Product Number	2N4392

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