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2N3700UB +BOM

Bipolar (BJT) Transistor NPN 80 V 1 A 500 mW Surface Mount UB

  • Produttore:

    MICROCHIP TECHNOLOGY INC

  • ProduttorePart #:

    2N3700UB

  • Scheda dati:

    2N3700UB Scheda dati (PDF) pdf-icon

  • Part Life Cycle Code:

    Active

  • Reach Compliance Code:

    compliant

  • Additional Feature:

    HIGH RELIABILITY

  • Collector Current-Max (IC):

    1 A

2N3700UB Information

Description

The 2N3700UB is a general-purpose NPN bipolar junction transistor (BJT) from New England Semiconductor. It has an operating voltage of 80V, a current rating of 1A, and a power dissipation of 500mW. The device comes in a UB-4 package, which is a waffle-packaging style. This transistor can be used for a variety of applications, including amplification, switching, and linear regulation. Its high voltage rating makes it suitable for use in audio amplifier circuits, motor control systems, and other applications where high voltage is required. The 2N3700UB has a relatively low current rating compared to some other BJTs on the market, but its power dissipation is still sufficient for many general-purpose applications. Overall, this transistor provides a good balance of performance and cost-effectiveness for designers looking for a reliable and versatile BJT solution.

Features

Based on the provided information, here are the features of the 2N3700UB:

  • Type: General Purpose Bipolar Junction Transistor (BJT) NPN
  • Voltage Rating: 80V
  • Current Rating: 1A
  • Power Dissipation: 500mW
  • Package: UB-4 (4-Pin Case, Waffle Lead)

Please note that the provided information does not include any additional features or specifications.

Package

The package type of 2N3700UB is UB-4, which is a Waffle package.

Pinout

Based on the product information, the 2N3700UB has a pin count of 4, which is indicated by the "Package: UB-4" description.

As for the function, since it's a BJT (Bipolar Junction Transistor) NPN type, it likely has three pins:

  • Base (input): controls the flow of current
  • Collector (output): receives the output current
  • Emitter (ground): provides a reference voltage

The "GP" in the product name suggests that it's a general-purpose transistor, suitable for various applications.

Manufacturer

The manufacturer of the 2N3700UB is New England Semiconductor, which is a semiconductor component manufacturer.

Applications

The 2N3700UB is a general-purpose NPN transistor suitable for various applications, including:

  • Amplifiers
  • Switching circuits
  • Driver circuits
  • Power supplies
  • Audio equipment
  • Industrial control systems

Its high current gain and voltage rating make it a versatile component for a wide range of electronic designs.

Specifiche

Part Life Cycle Code Active Reach Compliance Code compliant
Additional Feature HIGH RELIABILITY Collector Current-Max (IC) 1 A
Collector-Emitter Voltage-Max 80 V Configuration SINGLE
DC Current Gain-Min (hFE) 15 JESD-30 Code R-CDSO-N3
JESD-609 Code e0 Number of Elements 1
Number of Terminals 3 Operating Temperature-Max 175 °C
Polarity/Channel Type NPN Power Dissipation-Max (Abs) 0.5 W
Qualification Status Not Qualified Surface Mount YES
Terminal Finish TIN LEAD Terminal Form NO LEAD
Terminal Position DUAL Transistor Application SWITCHING
Transistor Element Material SILICON Transition Frequency-Nom (fT) 100 MHz
Package/Case UB-4

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