Metodo di pagamento
IXYK120N120C3 +BOM
N-Channel Insulated Gate Bipolar Transistor (IGBT) Chip, 1200V, 220A, 1500W, TO-264 Package
TO-264-3-
Produttore:
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ProduttorePart #:
IXYK120N120C3
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Scheda dati:
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Technology:
Si
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Mounting Style:
Through Hole
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
1.2 kV
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EDA/CAD Modelli:
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Disponibilità: 4441 PZ
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IXYK120N120C3 Descrizione generale
IXYK120N120C3 sets the standard for IGBT modules with its high performance and reliability. Its innovative features ensure safe and efficient operation in demanding environments, while its low power dissipation and energy-efficient design deliver cost savings and environmental benefits. The module's ability to handle high-speed switching applications makes it a versatile option for a wide range of industrial uses
Caratteristiche principali
- Surface-mount package for reduced space usage
- Improved thermal performance for reliable operation
- Economical and efficient design for cost-effective solutions
Applicazione
- Industrial motor drives
- Power supplies
- Factory automation
Specifiche
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 3.2 V |
Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 240 A |
Pd - Power Dissipation | 1.5 kW | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Series | Planar |
Continuous Collector Current Ic Max | 240 A | Gate-Emitter Leakage Current | 100 nA |
Product Type | IGBT Transistors | Factory Pack Quantity | 25 |
Subcategory | IGBTs | Unit Weight | 0.373904 oz |
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In Stock: 4.441
Minimum Order: 1
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