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1200V IGBT Discrete Single Device, 100A, XPT Plus247
TO-247PLUS-3Produttore:
ProduttorePart #:
IXYX100N120C3
Scheda dati:
Technology:
Si
Mounting Style:
Through Hole
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
1.2 kV
EDA/CAD Modelli:
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In the realm of power electronics, the IXYX100N120C3 module stands out as a top-tier solution for demanding applications. With a focus on both efficiency and reliability, this module offers a blend of advanced technology and user-friendly features. Its versatility makes it a versatile choice for a wide range of industrial uses, providing the power and performance needed for success in today's competitive market
Product Category | IGBT Transistors | Technology | Si |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 3.5 V |
Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 195 A |
Pd - Power Dissipation | 1.15 kW | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Series | IXYX100N120C3 |
Continuous Collector Current Ic Max | 188 A | Gate-Emitter Leakage Current | 100 nA |
Product Type | IGBT Transistors | Factory Pack Quantity | 30 |
Subcategory | IGBTs | Tradename | XPT |
Unit Weight | 1.340411 oz |
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