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IGBT PT 650 V 370 A 1150 W Through Hole PLUS247™-3
PLUS247Produttore:
ProduttorePart #:
IXXX200N65B4
Scheda dati:
Series:
GenX4™, XPT™
IGBT Type:
PT
Voltage - Collector Emitter Breakdown (Max):
650 V
Current - Collector (Ic) (Max):
370 A
Compila il breve modulo sottostante e ti forniremo immediatamente il preventivo.
The IXXX200N65B4 product combines state-of-the-art technology with innovative design features to deliver exceptional performance in high-power applications. With a focus on efficiency and reliability, these IGBTs offer low thermal resistance, fast switching speeds, and high current densities. The square Reverse Bias Safe Operating Areas (RBSOA) and 10µs Short Circuit Safe Operating Area (SCSOA) ensure ruggedness under challenging conditions, while the 650V breakdown voltage and positive temperature coefficient make them ideal for demanding industrial environments
Category | Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs | Series | GenX4™, XPT™ |
IGBT Type | PT | Voltage - Collector Emitter Breakdown (Max) | 650 V |
Current - Collector (Ic) (Max) | 370 A | Current - Collector Pulsed (Icm) | 1000 A |
Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 160A | Power - Max | 1150 W |
Switching Energy | 4.4mJ (on), 2.2mJ (off) | Input Type | Standard |
Gate Charge | 553 nC | Td (on/off) @ 25°C | 62ns/245ns |
Test Condition | 400V, 100A, 1Ohm, 15V | Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole | Base Product Number | IXXX200 |
feature-packaging | feature-rad-hard | ||
feature-pin-count | 3 | feature-cecc-qualified | No |
feature-esd-protection | feature-military | No | |
feature-aec-qualified | No | feature-aec-qualified-number | |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc | Yes |
feature-svhc-exceeds-threshold | Yes |
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Prodotto 365 giorni
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Qtà. | Prezzo unitario | Est. Prezzo |
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oppure compila il modulo sottostante per richiedere un preventivo per IXXX200N65B4, preventivi garantiti entro
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