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IXDH20N120D1 +BOM

IGBT Transistors with a capacity of 20 Amps and a voltage rating of 1200V, model IXDH20N120D1

Produttore:

Littelfuse Inc
ProduttorePart #:

IXDH20N120D1
Scheda dati:

IXDH20N120D1 Scheda dati (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.2 kV
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IXDH20N120D1

IXDH20N120D1 Descrizione generale

The IXDH20N120D1 is a dual IGBT module specifically designed for high power applications, with a robust current rating of 20A and a voltage rating of 1200V. This module is perfectly suited for high power electronic systems such as motor drives, inverters, and power supplies. Its advanced insulated gate bipolar transistor (IGBT) technology offers the best of both worlds, combining the ease of control of a MOSFET with the high current handling capability of a bipolar transistor. This allows for efficient switching and high power handling capacity, making it perfect for applications requiring high power and voltage levels. Additionally, the IXDH20N120D1 boasts a low saturation voltage to reduce power dissipation and improve overall efficiency, along with a fast switching speed for high-frequency operation and precise control of power delivery. With built-in protective features such as overcurrent and overtemperature protection, this module ensures reliable and safe operation in demanding environments

Caratteristiche principali

NPT IGBT technology
Low saturation voltage
Low switching losses
Square RBSOA, no latch up
High short circuit capability
Positive temperature coefficient for easy paralleling
MOS input, voltage controlled
Optional ultra fast diode
International standard packages

Applicazione

AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode power supplies

Specifiche

Product Category:	IGBT Transistors	Technology:	Si
Mounting Style:	Through Hole	Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.2 kV	Collector-Emitter Saturation Voltage:	2.4 V
Maximum Gate Emitter Voltage:	- 20 V, + 20 V	Continuous Collector Current at 25 C:	38 A
Pd - Power Dissipation:	200 W	Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C	Series:	IXDH20N120
Packaging:	Tube	Continuous Collector Current:	38 A
Continuous Collector Current Ic Max:	50 A	Gate-Emitter Leakage Current:	500 nA
Height:	21.46 mm	Length:	16.26 mm
Operating Temperature Range:	- 55 C to + 150 C	Product Type:	IGBT Transistors
Factory Pack Quantity:	30	Subcategory:	IGBTs
Width:	5.3 mm	Unit Weight:	0.229281 oz

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