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Vedi Specifiche Tecniche

IXBK75N170 +BOM

IGBT 1700 V 200 A 1040 W Through Hole TO-264AA

Produttore:

Littelfuse Inc
ProduttorePart #:

IXBK75N170
Scheda dati:

IXBK75N170 Scheda dati (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

1.7 kV
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IXBK75N170

IXBK75N170 Descrizione generale

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device.

Caratteristiche principali

High blocking voltage
High power density
High current handling capability
Low conduction losses
MOS gate turn on for drive simplicity
International standard and proprietary ISOPLUS
TM
packages
Benefits:
Eliminates multiple series-parallel lower voltage, lower current rated
devices
Simpler system design
Improved reliability
Reduced component count
Reduced system cost

Applicazione

Radar transmitter power supplies
Radar pulse modulators
Capacitor discharge circuits
High voltage power supplies
AC switches
HV circuit breakers
Pulser circuits
High voltage test equipment
Laser & X-ray generators

Specifiche

Product Category:	IGBT Transistors	Technology:	Si
Mounting Style:	Through Hole	Configuration:	Single
Collector- Emitter Voltage VCEO Max:	1.7 kV	Collector-Emitter Saturation Voltage:	3.1 V
Maximum Gate Emitter Voltage:	- 20 V, + 20 V	Continuous Collector Current at 25 C:	200 A
Pd - Power Dissipation:	1.04 kW	Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C	Series:	IXBK75N170
Packaging:	Tube	Height:	26.16 mm
Length:	19.96 mm	Product Type:	IGBT Transistors
Factory Pack Quantity:	25	Subcategory:	IGBTs
Tradename:	BIMOSFET	Width:	5.13 mm
Unit Weight:	0.373904 oz

Politiche di servizio e altro

Relativi al servizio post-vendita e alla liquidazione

Pagamento

Metodo di pagamento

TT/bonifico bancario

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Western Union

Grammo dei soldi

Per canali di pagamento alternativi, contattaci a:

[email protected]

Spedizione e imballaggio

metodo di spedizione

Fedex

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NTN

Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..

Garanzia

Prodotto 365 giorni

Qualità garantita

Promettiamo di fornire un servizio di garanzia della qualità di 365 giorni per tutti i nostri prodotti.

Valutazioni e recensioni

Di più

D**s 03/26/2024

I put 5 stars in absentia. Came quickly, i will not collect and my son. I hope the complete set of parts.

R**a 05/02/2022

I am thoroughly impressed with Avaq's fast delivery and excellent customer service. The NRF24L01P components I purchased arrived ahead of schedule and were exactly what I needed.

J**h 07/15/2020

very good. received items in 5 days

S**n 06/25/2020

I received the parcel. Came quickly. After checking in the work, write off. Thanks to the seller.