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Heavy-duty electrical component for robust and fault-tolerant power system
i4-Pac-5Produttore:
ProduttorePart #:
IXBF20N360
Scheda dati:
Feature-pin-count:
3
Feature-cecc-qualified:
No
Feature-military:
No
Feature-aec-qualified:
No
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The BiMOSFET IXBF20N360 stands out as a cutting-edge device that offers a unique combination of MOSFET and IGBT strengths. Through innovative non-epitaxial construction and advanced fabrication techniques, these high voltage devices have proven to be highly successful in various applications. Their design allows for parallel operation, thanks to the positive voltage temperature coefficient exhibited by both their saturation voltage and forward voltage drop of the intrinsic diode. Additionally, the presence of a built-in intrinsic body diode serves as a protective mechanism, offering an alternative pathway for inductive load currents during device turn-off. This crucial feature effectively safeguards the device from potential damage caused by high Ldi/dt voltage transients
feature-packaging | feature-rad-hard | ||
feature-pin-count | 3 | feature-cecc-qualified | No |
feature-esd-protection | feature-military | No | |
feature-aec-qualified | No | feature-aec-qualified-number | |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc | |
feature-svhc-exceeds-threshold |
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AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..
Prodotto 365 giorni
Qualità garantita
Promettiamo di fornire un servizio di garanzia della qualità di 365 giorni per tutti i nostri prodotti.
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1+ | - | - |
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