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Vedi Specifiche Tecniche

PC28F512P33TFA +BOM

Energy-efficient with only 31mA current consumption

Produttore:

Micron Technology Inc.
ProduttorePart #:

PC28F512P33TFA
Scheda dati:

PC28F512P33TFA Scheda dati (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NOR
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per PC28F512P33TFA

PC28F512P33TFA Descrizione generale

Designed for durability and reliability, the PC28F512P33TFA guarantees a minimum of 100,000 program/erase cycles, demonstrating its robust quality and long lifespan. In addition to its high capacity and fast speeds, this NAND Flash memory device offers advanced protection features, including hardware data protection and software-based security measures. These additional layers of security ensure that sensitive information stored on the device remains safe and secure at all times, making it a reliable choice for data storage in various embedded systems

Caratteristiche principali

High-Performance Read, Program and Erase
– 96 ns initial read access
– 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output
– 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output
– 8-, 16-, and continuous-word synchronous-burst Reads
– Programmable WAIT configuration
– Customer-configurable output driver impedance
– Buffered Programming: 2.0 μs/Word (typ), 512-Mbit 65 nm
– Block Erase: 0.9 s per block (typ)
– 20 μs (typ) program/erase suspend
Architecture
– 16-bit wide data bus
– Multi-Level Cell Technology
– Symmetrically-Blocked Array Architecture
– 256-Kbyte Erase Blocks
– 1-Gbit device: Eight 128-Mbit partitions
– 512-Mbit device: Eight 64-Mbit partitions
– 256-Mbit device: Eight 32-Mbit partitions
– 128-Mbit device: Eight 16-Mbit partitions
– Read-While-Program and Read-While-Erase
– Status Register for partition/device status
– Blank Check feature
Quality and Reliability
– Expanded temperature: –30 °C to +85 °C
– Minimum 100,000 erase cycles per block
– 65nm Process Technology
Power
– Core voltage: 1.7 V - 2.0 V
– I/O voltage: 1.7 V - 2.0 V
– Standby current: 60 μA (typ) for 512-Mbit, 65 nm
– Deep Power-Down mode: 2 μA (typ)
– Automatic Power Savings mode
– 16-word synchronous-burst read current: 23 mA (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz
Software
– Micron® Flash data integrator (FDI) optimized
– Basic command set (BCS) and extended command set (ECS) compatible
– Common Flash interface (CFI) capable
Security
– One-time programmable (OTP) space
64 unique factory device identifier bits
2112 user-programmable OTP bits
– Absolute write protection: VPP = GND
– Power-transition erase/program lockout
– Individual zero latency block locking
– Individual block lock-down
Density and packaging
– 128Mb, 256Mb, 512Mbit, and 1-Gbit
– Address-data multiplexed and non-multiplexed interfaces
– 64-Ball Easy BGA

Specifiche

Programmabe	Not Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NOR
Memory Size	512Mbit	Memory Organization	32M x 16
Memory Interface	Parallel	Clock Frequency	52 MHz
Write Cycle Time - Word, Page	95ns	Access Time	95 ns
Voltage - Supply	2.3V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount

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