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Vedi Specifiche Tecniche

PC28F512P33EFA +BOM

Flash Memory - High Speed

Produttore:

Micron Technology Inc.
ProduttorePart #:

PC28F512P33EFA
Scheda dati:

PC28F512P33EFA Scheda dati (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NOR
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per PC28F512P33EFA

PC28F512P33EFA Descrizione generale

The PC28F512P33EFA flash memory device from Intel is a high-quality, reliable solution for a wide range of electronic applications. With its 512Mb capacity and voltage range of 2.7V to 3.6V, it is versatile and efficient for use in consumer electronics, networking equipment, and industrial control systems. Its 64-lead TSOP package ensures easy integration into various devices, and its 100,000 program/erase cycle endurance guarantees long-term performance and durability. The device's deep power-down mode also helps to minimize power consumption, making it an energy-efficient choice for embedded applications

Caratteristiche principali

High-Performance Read, Program and Erase
– 96 ns initial read access
– 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output
– 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output
– 8-, 16-, and continuous-word synchronous-burst Reads
– Programmable WAIT configuration
– Customer-configurable output driver impedance
– Buffered Programming: 2.0 μs/Word (typ), 512-Mbit 65 nm
– Block Erase: 0.9 s per block (typ)
– 20 μs (typ) program/erase suspend
Architecture
– 16-bit wide data bus
– Multi-Level Cell Technology
– Symmetrically-Blocked Array Architecture
– 256-Kbyte Erase Blocks
– 1-Gbit device: Eight 128-Mbit partitions
– 512-Mbit device: Eight 64-Mbit partitions
– 256-Mbit device: Eight 32-Mbit partitions
– 128-Mbit device: Eight 16-Mbit partitions
– Read-While-Program and Read-While-Erase
– Status Register for partition/device status
– Blank Check feature
Quality and Reliability
– Expanded temperature: –30 °C to +85 °C
– Minimum 100,000 erase cycles per block
– 65nm Process Technology
Power
– Core voltage: 1.7 V - 2.0 V
– I/O voltage: 1.7 V - 2.0 V
– Standby current: 60 μA (typ) for 512-Mbit, 65 nm
– Deep Power-Down mode: 2 μA (typ)
– Automatic Power Savings mode
– 16-word synchronous-burst read current: 23 mA (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz
Software
– Micron® Flash data integrator (FDI) optimized
– Basic command set (BCS) and extended command set (ECS) compatible
– Common Flash interface (CFI) capable
Security
– One-time programmable (OTP) space
64 unique factory device identifier bits
2112 user-programmable OTP bits
– Absolute write protection: VPP = GND
– Power-transition erase/program lockout
– Individual zero latency block locking
– Individual block lock-down
Density and packaging
– 128Mb, 256Mb, 512Mbit, and 1-Gbit
– Address-data multiplexed and non-multiplexed interfaces
– 64-Ball Easy BGA

Specifiche

Programmabe	Not Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NOR
Memory Size	512Mbit	Memory Organization	32M x 16
Memory Interface	Parallel	Clock Frequency	52 MHz
Write Cycle Time - Word, Page	95ns	Access Time	95 ns
Voltage - Supply	2.3V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount	Product Category	NOR Flash
Mounting Style	SMD/SMT	Series	P33
Supply Voltage - Min	2.3 V	Supply Voltage - Max	3.6 V
Active Read Current - Max	24 mA	Interface Type	Parallel
Maximum Clock Frequency	52 MHz	Organization	32 M x 16
Data Bus Width	16 bit	Timing Type	Asynchronous, Synchronous
Minimum Operating Temperature	- 40 C	Maximum Operating Temperature	+ 85 C
Product Type	NOR Flash	Standard	Common Flash Interface (CFI)
Factory Pack Quantity	1800	Subcategory	Memory & Data Storage
Type	No Boot Block

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