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PC48F4400P0VB0EA +BOM

NOR Flash memory for EASYBGA-64(10x13) PC boards

Produttore:

Micron Technology Inc.
ProduttorePart #:

PC48F4400P0VB0EA
Scheda dati:

PC48F4400P0VB0EA Scheda dati (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NOR
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per PC48F4400P0VB0EA

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

PC48F4400P0VB0EA Descrizione generale

Intel's PC48F4400P0VB0EA NAND Flash memory chip is a powerhouse designed for demanding industrial and embedded systems. Featuring fast data transfer rates through its parallel interface, this chip operates at a supply voltage of 3.3 volts, delivering consistent performance. With error correction and wear leveling capabilities, data integrity is guaranteed, making it a dependable choice for high-speed data storage needs. Its compatibility with various protocols and commands simplifies integration, while its compact form factor and wide operating temperature range enhance its versatility

Caratteristiche principali

High Performance Read-While-Write/Erase
— Burst frequency at 66 MHz (zero wait states)
—60ns Initial access read speed
— 11 ns Burst mode read speed
— 20 ns Page mode read speed
— 4-, 8-, 16-, and Continuous-Word Burst mode reads
— Burst and Page mode reads in all Blocks, across all partition boundaries
— Burst Suspend feature
— Enhanced Factory Programming at 3.1 µs/word
Security
—128-BitOTP Protection Register:
64 unique pre-programmed bits + 64 user-programmable bits
— Absolute Write Protection with VPP at ground
— Individual and Instantaneous Block Locking/Unlocking with Lock-Down Capability
Quality and Reliability
—Temperature Range:–40 °C to +85 °C
— 100K Erase Cycles per Block
— 90 nm ETOX™ IX Process
— 130 nm ETOX™ VIII Process
Architecture
— Multiple 4-Mbit partitions
— Dual Operation: RWW or RWE
— Parameter block size = 4-Kword
— Main block size = 32-Kword
— Top or bottom parameter devices
—16-bit wide data bus
Software
— 5 µs (typ.) Program and Erase Suspend latency time
— Flash Data Integrator (FDI) and Common Flash Interface (CFI) Compatible
— Programmable WAIT signal polarity
Packaging and Power
— 90 nm: 32- and 64-Mbit in VF BGA
— 130 nm: 32-, 64-, and 128-Mbit in VF BGA
— 130 nm: 128-Mbit in QUAD+ package
— 56 Active Ball Matrix, 0.75 mm Ball-Pitch
—VCC= 1.70 V to 1.95 V
—VCCQ(90 nm) = 1.7 V to 1.95 V
—VCCQ(130 nm) = 1.7 V to 2.24 V or 1.35 V to 1.80 V
—VCCQ(130 nm) = 1.35 V to 2.24 V
— Standby current (130 nm): 8 µA (typ.)
— Read current: 8 mA (4-word burst, typ.)

Specifiche

Programmabe	Not Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NOR
Memory Size	512Mbit	Memory Organization	32M x 16
Memory Interface	Parallel	Clock Frequency	52 MHz
Write Cycle Time - Word, Page	100ns	Access Time	100 ns
Voltage - Supply	1.7V ~ 2V	Operating Temperature	-40°C ~ 85°C (TC)
Mounting Type	Surface Mount

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