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Vedi Specifiche Tecniche

PC28F00AM29EWHA +BOM

LBGA parallel NOR Flash with 64MX16 MLC

Produttore:

Micron Technology Inc.
ProduttorePart #:

PC28F00AM29EWHA
Scheda dati:

PC28F00AM29EWHA Scheda dati (PDF)
Programmabe:

Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NOR
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per PC28F00AM29EWHA

E-mail: [email protected]

Skype: live:.cid.ab6b29428937b76

tel: +852 95804164

PC28F00AM29EWHA Descrizione generale

Micron Technology's PC28F00AM29EWHA is a state-of-the-art 2 Gb (256 MB) NAND Flash Memory device known for its exceptional performance and reliability. It features a parallel interface with a voltage range of 2.7V to 3.6V and operates in temperatures ranging from -40°C to 85°C. The memory device can be organized in a x8 or x16 configuration and supports both asynchronous and toggle NAND interfaces. With a maximum read throughput of 65 MB/s and a maximum program throughput of 12 MB/s, the PC28F00AM29EWHA offers high-speed performance. Its fast page read time of 25 µs and block erase time of 2 ms further contribute to its impressive efficiency. Additionally, the device guarantees a minimum of 100,000 program/erase cycles, ensuring its long-term reliability. Suitable for a variety of applications, including consumer electronics, automotive, industrial, and networking, the PC28F00AM29EWHA provides ample storage capacity and high-speed performance for demanding tasks

Caratteristiche principali

High-Performance Read, Program and Erase
– 96 ns initial read access
– 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output
– 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output
– 8-, 16-, and continuous-word synchronous-burst Reads
– Programmable WAIT configuration
– Customer-configurable output driver impedance
– Buffered Programming: 2.0 μs/Word (typ), 512-Mbit 65 nm
– Block Erase: 0.9 s per block (typ)
– 20 μs (typ) program/erase suspend
Architecture
– 16-bit wide data bus
– Multi-Level Cell Technology
– Symmetrically-Blocked Array Architecture
– 256-Kbyte Erase Blocks
– 1-Gbit device: Eight 128-Mbit partitions
– 512-Mbit device: Eight 64-Mbit partitions
– 256-Mbit device: Eight 32-Mbit partitions
– 128-Mbit device: Eight 16-Mbit partitions
– Read-While-Program and Read-While-Erase
– Status Register for partition/device status
– Blank Check feature
Quality and Reliability
– Expanded temperature: –30 °C to +85 °C
– Minimum 100,000 erase cycles per block
– 65nm Process Technology
Power
– Core voltage: 1.7 V - 2.0 V
– I/O voltage: 1.7 V - 2.0 V
– Standby current: 60 μA (typ) for 512-Mbit, 65 nm
– Deep Power-Down mode: 2 μA (typ)
– Automatic Power Savings mode
– 16-word synchronous-burst read current: 23 mA (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz
Software
– Micron® Flash data integrator (FDI) optimized
– Basic command set (BCS) and extended command set (ECS) compatible
– Common Flash interface (CFI) capable
Security
– One-time programmable (OTP) space
64 unique factory device identifier bits
2112 user-programmable OTP bits
– Absolute write protection: VPP = GND
– Power-transition erase/program lockout
– Individual zero latency block locking
– Individual block lock-down
Density and packaging
– 128Mb, 256Mb, 512Mbit, and 1-Gbit
– Address-data multiplexed and non-multiplexed interfaces
– 64-Ball Easy BGA

Specifiche

Programmabe	Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NOR
Memory Size	1Gbit	Memory Organization	128M x 8, 64M x 16
Memory Interface	Parallel	Clock Frequency	-
Write Cycle Time - Word, Page	100ns	Access Time	100 ns
Voltage - Supply	2.7V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount

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