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PC48F4400P0VB0EE +BOM

NOR Flash Parallel 512Mbit

PC48F4400P0VB0EE Descrizione generale

The PC48F4400P0VB0EE from Micron Technology is a top-of-the-line NAND flash memory chip designed for high-speed data access and reliability. With a storage capacity of 4GB and a voltage of 3.3V, this chip is ideal for use in solid-state drives (SSDs) and industrial equipment that require fast and efficient data storage. Its parallel interface and maximum clock frequency of 40MHz ensure quick and seamless data transfer, while its 2KB page size and 128KB block size allow for efficient storage and retrieval of large amounts of data. Additionally, the built-in error correction codes (ECC) and wear-leveling algorithm guarantee data integrity and prolong the lifespan of the memory cells, ensuring long-term reliability. The PC48F4400P0VB0EE is also designed to operate in a wide temperature range, making it suitable for use in a variety of environmental conditions

Caratteristiche principali

  • „ High Performance Read-While-Write/Erase
  • — Burst frequency at 66 MHz (zero wait states)
  • —60ns Initial access read speed
  • — 11 ns Burst mode read speed
  • — 20 ns Page mode read speed
  • — 4-, 8-, 16-, and Continuous-Word Burst mode reads
  • — Burst and Page mode reads in all Blocks, across all partition boundaries
  • — Burst Suspend feature
  • — Enhanced Factory Programming at 3.1 µs/word „
  • Security
  • —128-BitOTP Protection Register:
  • 64 unique pre-programmed bits + 64 user-programmable bits
  • — Absolute Write Protection with VPP at ground
  • — Individual and Instantaneous Block Locking/Unlocking with Lock-Down Capability„
  • Quality and Reliability
  • —Temperature Range:–40 °C to +85 °C
  • — 100K Erase Cycles per Block
  • — 90 nm ETOX™ IX Process
  • — 130 nm ETOX™ VIII Process
  • Architecture
  • — Multiple 4-Mbit partitions
  • — Dual Operation: RWW or RWE
  • — Parameter block size = 4-Kword
  • — Main block size = 32-Kword
  • — Top or bottom parameter devices
  • —16-bit wide data bus
  • Software
  • — 5 µs (typ.) Program and Erase Suspend latency time
  • — Flash Data Integrator (FDI) and Common Flash Interface (CFI) Compatible
  • — Programmable WAIT signal polarity
  • Packaging and Power
  • — 90 nm: 32- and 64-Mbit in VF BGA
  • — 130 nm: 32-, 64-, and 128-Mbit in VF BGA
  • — 130 nm: 128-Mbit in QUAD+ package
  • — 56 Active Ball Matrix, 0.75 mm Ball-Pitch
  • —VCC= 1.70 V to 1.95 V
  • —VCCQ(90 nm) = 1.7 V to 1.95 V
  • —VCCQ(130 nm) = 1.7 V to 2.24 V or 1.35 V to 1.80 V
  • —VCCQ(130 nm) = 1.35 V to 2.24 V
  • — Standby current (130 nm): 8 µA (typ.)
  • — Read current: 8 mA (4-word burst, typ.)

Specifiche

Pbfree Code Yes Part Life Cycle Code Obsolete
Pin Count 64 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8542.32.00.51
Access Time-Max 100 ns Additional Feature ASYNCHRONOUS READ MODE
Boot Block BOTTOM/TOP Command User Interface YES
Common Flash Interface YES Data Polling NO
JESD-30 Code R-PBGA-B64 JESD-609 Code e1
Length 13 mm Memory Density 536870912 bit
Memory IC Type FLASH Memory Width 16
Number of Functions 1 Number of Sectors/Size 8, 510
Number of Terminals 64 Number of Words 33554432 words
Number of Words Code 32000000 Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C Operating Temperature-Min -40 °C
Organization 32MX16 Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 260 Programming Voltage 1.8 V
Qualification Status Not Qualified Seated Height-Max 1.2 mm
Sector Size 16K,64K Standby Current-Max 0.00042 A
Supply Current-Max 0.031 mA Supply Voltage-Max (Vsup) 2 V
Supply Voltage-Min (Vsup) 1.7 V Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES Technology CMOS
Temperature Grade INDUSTRIAL Terminal Finish TIN SILVER COPPER
Terminal Form BALL Terminal Pitch 1 mm
Terminal Position BOTTOM Time@Peak Reflow Temperature-Max (s) 30
Toggle Bit NO Type NOR TYPE
Width 10 mm

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