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PC28F512M29EWHD +BOM

Non-volatile memory chip suitable for high-speed data storage applications

Produttore:

MICRON
ProduttorePart #:

PC28F512M29EWHD
Scheda dati:

PC28F512M29EWHD Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per PC28F512M29EWHD

Caratteristiche principali

High-Performance Read, Program and Erase
– 96 ns initial read access
– 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output
– 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output
– 8-, 16-, and continuous-word synchronous-burst Reads
– Programmable WAIT configuration
– Customer-configurable output driver impedance
– Buffered Programming: 2.0 μs/Word (typ), 512-Mbit 65 nm
– Block Erase: 0.9 s per block (typ)
– 20 μs (typ) program/erase suspend
Architecture
– 16-bit wide data bus
– Multi-Level Cell Technology
– Symmetrically-Blocked Array Architecture
– 256-Kbyte Erase Blocks
– 1-Gbit device: Eight 128-Mbit partitions
– 512-Mbit device: Eight 64-Mbit partitions
– 256-Mbit device: Eight 32-Mbit partitions
– 128-Mbit device: Eight 16-Mbit partitions
– Read-While-Program and Read-While-Erase
– Status Register for partition/device status
– Blank Check feature
Quality and Reliability
– Expanded temperature: –30 °C to +85 °C
– Minimum 100,000 erase cycles per block
– 65nm Process Technology
Power
– Core voltage: 1.7 V - 2.0 V
– I/O voltage: 1.7 V - 2.0 V
– Standby current: 60 μA (typ) for 512-Mbit, 65 nm
– Deep Power-Down mode: 2 μA (typ)
– Automatic Power Savings mode
– 16-word synchronous-burst read current: 23 mA (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz
Software
– Micron® Flash data integrator (FDI) optimized
– Basic command set (BCS) and extended command set (ECS) compatible
– Common Flash interface (CFI) capable
Security
– One-time programmable (OTP) space
64 unique factory device identifier bits
2112 user-programmable OTP bits
– Absolute write protection: VPP = GND
– Power-transition erase/program lockout
– Individual zero latency block locking
– Individual block lock-down
Density and packaging
– 128Mb, 256Mb, 512Mbit, and 1-Gbit
– Address-data multiplexed and non-multiplexed interfaces
– 64-Ball Easy BGA

Specifiche

Pbfree Code	Yes	Part Life Cycle Code	Obsolete
Reach Compliance Code	compliant	ECCN Code	EAR99
HTS Code	8542.32.00.51	Access Time-Max	100 ns
Alternate Memory Width	8	Command User Interface	YES
Common Flash Interface	YES	Data Polling	YES
JESD-30 Code	R-PBGA-B64	JESD-609 Code	e1
Length	13 mm	Memory Density	536870912 bit
Memory IC Type	FLASH	Memory Width	16
Number of Functions	1	Number of Sectors/Size	512
Number of Terminals	64	Number of Words	33554432 words
Number of Words Code	32000000	Operating Mode	ASYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min	-40 °C
Organization	32MX16	Page Size	16/32 words
Parallel/Serial	PARALLEL	Programming Voltage	2.7 V
Qualification Status	Not Qualified	Ready/Busy	YES
Seated Height-Max	1.4 mm	Sector Size	128K
Standby Current-Max	0.000225 A	Supply Current-Max	0.031 mA
Supply Voltage-Max (Vsup)	3.6 V	Supply Voltage-Min (Vsup)	2.7 V
Supply Voltage-Nom (Vsup)	3 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	INDUSTRIAL
Terminal Finish	TIN SILVER COPPER	Terminal Form	BALL
Terminal Pitch	1 mm	Terminal Position	BOTTOM
Toggle Bit	YES	Type	NOR TYPE
Width	11 mm

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