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PC28F128P30B85A +BOM

85ns PBGA64 Flash memory with 8MX16 capacity

Produttore:

Micron Technology Inc.
ProduttorePart #:

PC28F128P30B85A
Scheda dati:

PC28F128P30B85A Scheda dati (PDF)
Part Life Cycle Code:

Obsolete
ECCN Code:

EAR99
HTS Code:

8542.32.00.51
Access Time-Max:

85 ns
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per PC28F128P30B85A

PC28F128P30B85A Descrizione generale

The PC28F128P30B85A flash memory chip, manufactured by Intel Corporation, is a top-of-the-line storage solution for a variety of electronic devices. With its 128 megabit capacity and high-speed read access time of 85 nanoseconds, it is designed to meet the demands of even the most data-intensive applications. Its efficient data manipulation processes, with a typical erase time of 2 milliseconds and a programming time of 10 microseconds per word, make it a reliable and high-performance choice for automotive, industrial, and consumer electronics

Caratteristiche principali

High performance
— 85/88 ns initial access
— 40 MHz with zero wait states, 20 ns clock-to-data output
synchronous-burst read mode
— 25 ns asynchronous-page read mode
— 4-, 8-, 16-, and continuous-word burst mode
— Buffered Enhanced Factory Programming
(BEFP) at 5 µs/byte (Typ)
— 1.8 V buffered programming at 7 µs/byte (Typ)
Architecture
— Multi-Level Cell Technology: Highest Density
at Lowest Cost
— Asymmetrically-blocked architecture
— Four 32-KByte parameter blocks: top or
bottom configuration
— 128-KByte main blocks
Voltage and Power
— VCC (core) voltage: 1.7 V – 2.0 V
— VCCQ (I/O) voltage: 1.7 V – 3.6 V
— Standby current: 55 µA (Typ) for 256-Mbit
— 4-Word synchronous read current:
13 mA (Typ) at 40 MHz
Quality and Reliability
— Operating temperature: –40 °C to +85 °C
1-Gbit in SCSP is –30 °C to +85 °C
— Minimum 100,000 erase cycles per block
— ETOX™ VIII process technology (130 nm)
Security
— One-Time Programmable Registers:
64 unique factory device identifier bits
64 user-programmable OTP bits
Additional 2048 user-programmable OTP bits
— Selectable OTP Space in Main Array:
4x32KB parameter blocks + 3x128KB main
blocks (top or bottom configuration)
— Absolute write protection: VPP = VSS
— Power-transition erase/program lockout
— Individual zero-latency block locking
— Individual block lock-down
Software
— 20 µs (Typ) program suspend
— 20 µs (Typ) erase suspend
— Intel® Flash Data Integrator optimized
— Basic Command Set and Extended Command
Set compatible
— Common Flash Interface capable
Density and Packaging
— 64/128/256-Mbit densities in 56-Lead TSOP
package
— 64/128/256/512-Mbit densities in 64-Ball
Intel® Easy BGA package
— 64/128/256/512-Mbit and 1-Gbit densities in
Intel® QUAD+ SCSP
— 16-bit wide data bus

Specifiche

Part Life Cycle Code	Obsolete	Reach Compliance Code
ECCN Code	EAR99	HTS Code	8542.32.00.51
Access Time-Max	85 ns	Boot Block	BOTTOM
Command User Interface	YES	Common Flash Interface	YES
Data Polling	NO	JESD-30 Code	S-PBGA-B64
Memory Density	134217728 bit	Memory IC Type	FLASH
Memory Width	16	Number of Sectors/Size	4,127
Number of Terminals	64	Number of Words	8388608 words
Number of Words Code	8000000	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Organization	8MX16
Page Size	4 words	Parallel/Serial	PARALLEL
Qualification Status	Not Qualified	Sector Size	16K,64K
Standby Current-Max	0.000075 A	Supply Current-Max	0.051 mA
Surface Mount	YES	Technology	CMOS
Temperature Grade	INDUSTRIAL	Terminal Form	BALL
Terminal Pitch	1 mm	Terminal Position	BOTTOM
Toggle Bit	NO	Type	NOR TYPE

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