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PC28F512M29EWHA +BOM

Plastic ball grid array 64 packaging

Produttore:

Micron Technology Inc.
ProduttorePart #:

PC28F512M29EWHA
Scheda dati:

PC28F512M29EWHA Scheda dati (PDF)
Programmabe:

Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NOR
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per PC28F512M29EWHA

PC28F512M29EWHA Descrizione generale

The Micron Technology PC28F512M29EWHA is a top-of-the-line 512Mb NOR flash memory module that is ideal for use in a wide range of embedded applications. Its 3V supply voltage and high-speed read and program performance make it perfect for demanding environments such as automotive, industrial, and networking devices. With a 2KB block size and 128-bit ECC protection, data integrity and reliability are guaranteed, ensuring that the memory module can handle even the most critical tasks with ease

Caratteristiche principali

High-Performance Read, Program and Erase
– 96 ns initial read access
– 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output
– 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output
– 8-, 16-, and continuous-word synchronous-burst Reads
– Programmable WAIT configuration
– Customer-configurable output driver impedance
– Buffered Programming: 2.0 μs/Word (typ), 512-Mbit 65 nm
– Block Erase: 0.9 s per block (typ)
– 20 μs (typ) program/erase suspend
Architecture
– 16-bit wide data bus
– Multi-Level Cell Technology
– Symmetrically-Blocked Array Architecture
– 256-Kbyte Erase Blocks
– 1-Gbit device: Eight 128-Mbit partitions
– 512-Mbit device: Eight 64-Mbit partitions
– 256-Mbit device: Eight 32-Mbit partitions
– 128-Mbit device: Eight 16-Mbit partitions
– Read-While-Program and Read-While-Erase
– Status Register for partition/device status
– Blank Check feature
Quality and Reliability
– Expanded temperature: –30 °C to +85 °C
– Minimum 100,000 erase cycles per block
– 65nm Process Technology
Power
– Core voltage: 1.7 V - 2.0 V
– I/O voltage: 1.7 V - 2.0 V
– Standby current: 60 μA (typ) for 512-Mbit, 65 nm
– Deep Power-Down mode: 2 μA (typ)
– Automatic Power Savings mode
– 16-word synchronous-burst read current: 23 mA (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz
Software
– Micron® Flash data integrator (FDI) optimized
– Basic command set (BCS) and extended command set (ECS) compatible
– Common Flash interface (CFI) capable
Security
– One-time programmable (OTP) space
64 unique factory device identifier bits
2112 user-programmable OTP bits
– Absolute write protection: VPP = GND
– Power-transition erase/program lockout
– Individual zero latency block locking
– Individual block lock-down
Density and packaging
– 128Mb, 256Mb, 512Mbit, and 1-Gbit
– Address-data multiplexed and non-multiplexed interfaces
– 64-Ball Easy BGA

Specifiche

Programmabe	Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NOR
Memory Size	512Mbit	Memory Organization	64M x 8, 32M x 16
Memory Interface	Parallel	Clock Frequency	-
Write Cycle Time - Word, Page	100ns	Access Time	100 ns
Voltage - Supply	2.7V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount

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