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IRLR3110ZTRPBF +BOM

N-Channel 100 V 42A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK)

Produttore:

International Rectifier
ProduttorePart #:

IRLR3110ZTRPBF
Scheda dati:

IRLR3110ZTRPBF Scheda dati (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Factory Lead Time:

65 Weeks
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IRLR3110ZTRPBF

IRLR3110ZTRPBF Descrizione generale

Designed specifically for low voltage applications, the IRLR3110ZTRPBF power MOSFET offers exceptional performance in a compact package. Its small footprint makes it well-suited for space-constrained designs. With a drain-source voltage rating of 100V and a continuous drain current rating of 42A, this MOSFET delivers reliable performance in demanding applications. The low on-resistance of 4.4mΩ at a gate-source voltage of 10V minimizes power dissipation and maximizes efficiency, making it an excellent choice for applications where switching losses need to be minimized. Operating in temperatures ranging from -55°C to 175°C, it is suitable for a variety of industrial and automotive applications. The low gate charge of 28nC ensures fast switching speeds and reduces the risk of thermal runaway, guaranteeing safe and efficient operation. Additionally, the IRLR3110ZTRPBF is RoHS compliant, meeting environmental standards. Its small form factor, high current rating, and low on-resistance make it an outstanding option for voltage regulation, motor control, and power management in battery-operated devices

Caratteristiche principali

Wide operating temperature range
Low leakage current and high insulation resistance
Compliant with IEC 60747 standard

Applicazione

Compact power supplies
Efficient charging circuits
Dependable motor control

Specifiche

Source Content uid	IRLR3110ZTRPBF	Part Life Cycle Code	Active
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	65 Weeks	Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas)	110 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	42 A	Drain-source On Resistance-Max	0.014 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252AA
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	140 W
Pulsed Drain Current-Max (IDM)	250 A	Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON

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