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Vedi Specifiche Tecniche

IRLR2908TRLPBF +BOM

Low-voltage and high-current switching device suitable for many industries

Produttore:

International Rectifier
ProduttorePart #:

IRLR2908TRLPBF
Scheda dati:

IRLR2908TRLPBF Scheda dati (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Additional Feature:

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IRLR2908TRLPBF

IRLR2908TRLPBF Descrizione generale

Upgrade your power management systems with the IRLR2908TRLPBF and benefit from its advanced features and robust design. Experience efficient power handling, minimal power loss, and reliable operation in a compact and environmentally friendly package. Trust in the performance and quality of this N-Channel MOSFET for your next project or application

Caratteristiche principali

Advanced Process TechnologyUltra Low On-ResistanceDynamic dv/dt Rating175°C Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to Tjmax

Specifiche

Source Content uid	IRLR2908TRLPBF	Part Life Cycle Code	Obsolete
Reach Compliance Code	compliant	ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE	Application	SWITCHING
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252AA
JESD-30 Code	R-PSSO-G2	Moisture Sensitivity Level	1
Number of Elements	1	Number of Terminals	2
Operating Mode	ENHANCEMENT MODE	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Surface Mount	YES
Terminal Finish	MATTE TIN OVER NICKEL	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Element Material	SILICON	Product Category	MOSFET
Technology	Si	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	80 V	Id - Continuous Drain Current	39 A
Rds On - Drain-Source Resistance	28 mOhms	Vgs - Gate-Source Voltage	- 16 V, + 16 V
Vgs th - Gate-Source Threshold Voltage	2.5 V	Qg - Gate Charge	33 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	120 W	Fall Time	55 ns
Forward Transconductance - Min	35 S	Height	2.3 mm
Length	6.5 mm	Product Type	MOSFET
Rise Time	95 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	36 ns	Typical Turn-On Delay Time	12 ns
Width	6.22 mm	Part # Aliases	SP001567286
Unit Weight	0.011640 oz

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