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IRLR2705TRPBF +BOM
DPAK-packaged N-channel Silicon MOSFET
DPAK-3 (TO-252-3)-
Produttore:
Infineon
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ProduttorePart #:
IRLR2705TRPBF
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Scheda dati:
-
REACH:
Details
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Technology:
Si
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Mounting Style:
SMD/SMT
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Transistor Polarity:
N-Channel
All bill of materials (BOM) can be sent via email to [email protected], or fill below form to Quote for IRLR2705TRPBF, guaranteed quotes back within 12hr.
Disponibilità: 7655 PZ
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IRLR2705TRPBF Descrizione generale
The IRLR2705TRPBF is a high-performing N Channel MOSFET transistor with a maximum Drain-Source Voltage (Vds) of 55V and Continuous Drain Current (Id) of 28A. Its low On Resistance (Rds(on)) of 40mohm ensures efficient power handling, making it ideal for a wide range of applications requiring high current capability. With a Rds(on) Test Voltage (Vgs) of 10V, this MOSFET offers reliable and consistent performance under varying operating conditions
Caratteristiche principali
- - Maximum drain to source breakdown voltage of 55 V.
- - Gate source threshold voltage ranges from 1 V to 2 V.
- - Typical turn-off delay time of 21 ns.
- - Packaged in TO-252-3 package.
- - Unit weight of 0.139332 oz.
- - Single n-channel enhancement mode FET.
- - Operating temperature range of -55 C.
Specifiche
Product Category | MOSFET | REACH | Details |
Technology | Si | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 55 V | Id - Continuous Drain Current | 28 A |
Rds On - Drain-Source Resistance | 65 mOhms | Vgs - Gate-Source Voltage | - 16 V, + 16 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 16.7 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 46 W | Channel Mode | Enhancement |
Configuration | Single | Fall Time | 29 ns |
Forward Transconductance - Min | 11 S | Height | 2.3 mm |
Length | 6.5 mm | Product Type | MOSFET |
Rise Time | 100 ns | Factory Pack Quantity | 2000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | HEXFET Power MOSFET | Typical Turn-Off Delay Time | 21 ns |
Typical Turn-On Delay Time | 8.9 ns | Width | 6.22 mm |
Unit Weight | 0.011640 oz |
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In Stock: 7.655
Minimum Order: 1
Qtà. | Prezzo unitario | Est. Prezzo |
---|---|---|
1+ | $0,495 | $0,50 |
10+ | $0,443 | $4,43 |
30+ | $0,416 | $12,48 |
100+ | $0,392 | $39,20 |
500+ | $0,330 | $165,00 |
1000+ | $0,322 | $322,00 |
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