Questo sito web utilizza i cookie. Utilizzando questo sito, acconsenti all'utilizzo dei cookie. Per ulteriori informazioni, dai un'occhiata al nostro politica sulla riservatezza.

Le immagini servono solo come riferimento,

Vedi Specifiche Tecniche

IRFR9024NTRLPBF +BOM

P-Channel 55 V 11A (Tc) 38W (Tc) Surface Mount D-Pak

Produttore:

International Rectifier
ProduttorePart #:

IRFR9024NTRLPBF
Scheda dati:

IRFR9024NTRLPBF Scheda dati (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Factory Lead Time:

52 Weeks
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IRFR9024NTRLPBF

IRFR9024NTRLPBF Descrizione generale

P-Channel 55 V 11A (Tc) 38W (Tc) Surface Mount D-Pak

Caratteristiche principali

Smart sensing for advanced analytics
Fault-tolerant operation for reduced downtime
Silicon reliability for long lifespan

Applicazione

Smart grid technology
Renewable energy
Computer peripherals

Specifiche

Source Content uid	IRFR9024NTRLPBF	Part Life Cycle Code	Active
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	52 Weeks	Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas)	62 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	55 V
Drain Current-Max (ID)	11 A	Drain-source On Resistance-Max	0.175 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252AA
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	P-CHANNEL	Power Dissipation-Max (Abs)	38 W
Pulsed Drain Current-Max (IDM)	44 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN OVER NICKEL
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Product Category	MOSFET
REACH	Details	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	P-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	55 V
Id - Continuous Drain Current	11 A	Rds On - Drain-Source Resistance	175 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	19 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	38 W
Channel Mode	Enhancement	Fall Time	37 ns
Forward Transconductance - Min	2.5 S	Height	2.3 mm
Length	6.5 mm	Product Type	MOSFET
Rise Time	55 ns	Factory Pack Quantity	3000
Subcategory	MOSFETs	Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	23 ns	Typical Turn-On Delay Time	13 ns
Width	6.22 mm	Unit Weight	0.011640 oz
Series	HEXFET®	FET Type	P-Channel
Drain to Source Voltage (Vdss)	55 V	Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	175mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	350 pF @ 25 V
Power Dissipation (Max)	38W (Tc)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	IRFR9024

Politiche di servizio e altro

Relativi al servizio post-vendita e alla liquidazione

Pagamento

Metodo di pagamento

TT/bonifico bancario

PayPal

Western Union

Grammo dei soldi

Per canali di pagamento alternativi, contattaci a:

[email protected]

Spedizione e imballaggio

metodo di spedizione

Fedex

UPS

DHL

NTN

Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..