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Vedi Specifiche Tecniche

IRFR4615PBF +BOM

Efficient N-channel transistor with low conduction losses

Produttore:

International Rectifier
ProduttorePart #:

IRFR4615PBF
Scheda dati:

IRFR4615PBF Scheda dati (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

109 mJ
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IRFR4615PBF

IRFR4615PBF Descrizione generale

The IRFR4615PBF is a versatile and reliable power transistor for a wide range of applications. Its low on-state resistance of 0.042ohm allows for efficient power transfer, while the high drain current rating of 33A makes it suitable for high power applications. The N-Channel design and silicon construction ensure high performance and reliability, and the TO-252AA package provides a compact and easy-to-mount solution. With RoHS compliance, this transistor is ideal for environmentally conscious designs

Caratteristiche principali

Dynamic dV/dt rating
Repetitive avalanche rated
Surface mount (IRFR420, SiHFR420)
Straight lead (IRFU420, SiHFU420)
Available in tape and reel
Fast switching
Ease of paralleling
Material categorization: for definitions of compliance please see
www.vishay.com/doc?99912

Specifiche

Source Content uid	IRFR4615PBF	Part Life Cycle Code	Obsolete
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	109 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	150 V
Drain Current-Max (ID)	33 A	Drain-source On Resistance-Max	0.042 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252AA
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	144 W
Pulsed Drain Current-Max (IDM)	140 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN OVER NICKEL
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON

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