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IRFR3410PBF +BOM

Tube packaging for IRFR3410PBF, a power MOSFET for high voltage applications

Produttore:

International Rectifier
ProduttorePart #:

IRFR3410PBF
Scheda dati:

IRFR3410PBF Scheda dati (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

140 mJ
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IRFR3410PBF

IRFR3410PBF Descrizione generale

The IRFR3410PBF is a high-power field-effect transistor designed to handle up to 30A of current with a maximum voltage rating of 100V. With a low on-resistance of 0.039ohm, this N-channel semiconductor device is suitable for a wide range of power management applications. This silicon-based metal-oxide semiconductor FET is housed in a TO-252AA package, featuring lead-free construction and a plastic DPAK-3 design for improved thermal performance

Caratteristiche principali

Dynamic dV/dt Rating
Repetitive Avalanche Rated
Surface Mount (IRFR320/SiHFR320)
Straight Lead (IRFU320/SiHFU320)
Available in Tape and Reel
Fast Switching
Ease of Paralleling
Lead (Pb)-free Available

Specifiche

Source Content uid	IRFR3410PBF	Part Life Cycle Code	Obsolete
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	140 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	30 A	Drain-source On Resistance-Max	0.039 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252AA
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	110 W
Pulsed Drain Current-Max (IDM)	125 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN OVER NICKEL
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON

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