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Vedi Specifiche Tecniche

IRFB260NPBF +BOM

N-Channel 200 V 56A (Tc) 380W (Tc) Through Hole TO-220AB

Produttore:

International Rectifier
ProduttorePart #:

IRFB260NPBF
Scheda dati:

IRFB260NPBF Scheda dati (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Factory Lead Time:

15 Weeks
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IRFB260NPBF

IRFB260NPBF Descrizione generale

Designed for high power applications, the IRFB260NPBF is a top-tier N-channel power MOSFET that sets a new standard for efficiency and reliability. With its impressively low on-state resistance of 0.04 ohms, this MOSFET facilitates highly efficient power delivery and minimal power loss. Capable of handling a continuous drain current of 50A and a pulsed drain current of 200A, it is perfectly suited for high current applications, making it an ideal choice for demanding power systems

Caratteristiche principali

Robust electrical rating
High thermal conductivity

Small temperature coefficient
Low thermal impedance

Applicazione

Switching power supplies
Motor control
Audio amplifiers
Inverters
Battery management systems
Industrial automation
Renewable energy systems
LED lighting
Solar inverters
UPS (Uninterruptible Power Supplies)

Specifiche

Source Content uid	IRFB260NPBF	Part Life Cycle Code	Active
Reach Compliance Code	compliant	ECCN Code	EAR99
Factory Lead Time	15 Weeks	Avalanche Energy Rating (Eas)	450 mJ
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	200 V	Drain Current-Max (ID)	56 A
Drain-source On Resistance-Max	0.04 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB	JESD-30 Code	R-PSFM-T3
Number of Elements	1	Number of Terminals	3
Operating Mode	ENHANCEMENT MODE	Operating Temperature-Max	175 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	380 W	Pulsed Drain Current-Max (IDM)	220 A
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	SWITCHING
Transistor Element Material	SILICON

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