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IRF230 +BOM
IRF230 MOSFET: N-channel TO-3 type with 200V voltage rating, 9A current capacity, and 400mΩ resistance at 5A and 10V
TO-204AA-2-
Produttore:
Infineon
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ProduttorePart #:
IRF230
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Scheda dati:
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Technology:
Si
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Mounting Style:
Through Hole
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Transistor Polarity:
N-Channel
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Number Of Channels:
1 Channel
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EDA/CAD Modelli:
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IRF230 Descrizione generale
When it comes to high-speed power switching, the IRF230 power MOSFET is a top choice for engineers and designers working on electronic projects. Its N-channel design, with a drain-source voltage rating of 200 volts and a continuous drain current rating of 0.69 amperes, offers the performance and reliability needed for a wide range of applications. The low on-resistance of 4.5 ohms ensures efficient power switching operations in motor control, power supplies, lighting, inverters, and more. Additionally, the IRF230 features a gate threshold voltage of 2.0 volts, making it compatible with logic level drive circuits. Constructed using advanced technology, this MOSFET provides high switching performance and reliability, with a TO-39 package for easy mounting on printed circuit boards or heatsinks. Its fast switching speed and low on-resistance also make it suitable for use in audio amplifiers, RF amplifiers, and other high-frequency applications
Caratteristiche principali
- New generation of power electronics
- High-performance motor control
- Efficient power conversion solutions
Applicazione
- Instrumentation systems
- Sensor networks
- Power conditioning
Specifiche
Product Category | MOSFET | Technology | Si |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 200 V |
Id - Continuous Drain Current | 9 A | Rds On - Drain-Source Resistance | 490 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 75 W |
Channel Mode | Enhancement | Configuration | Single |
Fall Time | 40 ns | Height | 7.74 mm |
Length | 39.37 mm | Product Type | MOSFET |
Rise Time | 80 ns | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 60 ns |
Typical Turn-On Delay Time | 35 ns | Width | 25.53 mm |
Unit Weight | 0.229281 oz |
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In Stock: 7.171
Minimum Order: 1
Qtà. | Prezzo unitario | Est. Prezzo |
---|---|---|
1+ | $3,048 | $3,05 |
200+ | $1,180 | $236,00 |
500+ | $1,138 | $569,00 |
1000+ | $1,118 | $1.118,00 |
I prezzi sottostanti sono solo di riferimento.
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