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IMBG65R048M1HXTMA1 +BOM

High-power electronics require reliable N-channel MOSFETs like IMBGRXT

Produttore:

Infineon Technologies Corporation
ProduttorePart #:

IMBG65R048M1HXTMA1
Scheda dati:

IMBG65R048M1HXTMA1 Scheda dati (PDF)
Series:

CoolSiC™
FET Type:

N-Channel
Technology:

SiCFET (Silicon Carbide)
Drain To Source Voltage (Vdss):

650 V
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IMBG65R048M1HXTMA1

IMBG65R048M1HXTMA1 Descrizione generale

N-Channel 650 V 45A (Tc) 183W (Tc) Surface Mount PG-TO263-7-12

Infineon Technologies Corporation inventario

Caratteristiche principali

Low Q
rr
oss
Low switching losses
Commutation robust fast body diode
Leading trench technology with superior gate oxide reliability
Increased avalanche capability
SMD package for direct integration into PCB
Sense pin for optimized switching performance
High performance, high reliability and ease of use
Enable high system efficiency and power density
Reduces system cost and complexity
Enable cheaper, simpler and smaller systems
Works in topologies with continuous hard commutation
Fit for high temperature and harsh operations
Enables bi-directional topologies

Infineon Technologies Corporation Stock originale

Applicazione

Server
Telecom
SMPS
Solar energy systems
Energy storage and battery formation
UPS
EV charging
Motor drives

Specifiche

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	CoolSiC™
FET Type	N-Channel	Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V	Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V	Rds On (Max) @ Id, Vgs	64mOhm @ 20.1A, 18V
Vgs(th) (Max) @ Id	5.7V @ 6mA	Gate Charge (Qg) (Max) @ Vgs	33 nC @ 18 V
Vgs (Max)	+23V, -5V	Input Capacitance (Ciss) (Max) @ Vds	1118 pF @ 400 V
FET Feature	-	Power Dissipation (Max)	183W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Surface Mount
Base Product Number	IMBG65	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	MOSFET	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	650 V	Id - Continuous Drain Current	45 A
Rds On - Drain-Source Resistance	64 mOhms	Vgs - Gate-Source Voltage	- 5 V, + 23 V
Vgs th - Gate-Source Threshold Voltage	5.7 V	Qg - Gate Charge	33 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	183 W	Channel Mode	Enhancement
Product	MOSFET	Product Type	MOSFET
Factory Pack Quantity	1000	Subcategory	MOSFETs
Part # Aliases	IMBG65R048M1H SP005539172

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