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IKW60N60H3FKSA1 +BOM

IGBT Transistors for TrenchStop

IKW60N60H3FKSA1 Descrizione generale

As a member of Infineon Technologies' esteemed CoolMOS™ superjunction MOSFET series, the IKW60N60H3FKSA1 sets the bar for high-performance N-channel enhancement mode power MOSFET transistors. Featuring a 600V drain-source voltage rating and a continuous drain current of 60A, this transistor is well-equipped to handle a broad spectrum of power electronics applications with ease. Its impressively low on-state resistance of 0.13 ohms ensures maximal efficiency and minimized power dissipation, making it a standout choice for projects where energy efficiency is paramount. By leveraging advanced superjunction technology, the IKW60N60H3FKSA1 delivers superior thermal performance, reduced switching losses, and enhanced reliability compared to conventional MOSFETs. These features make it a compelling option for high-power applications where performance and dependability are non-negotiable. Housed in a TO-247 package, this transistor offers outstanding thermal conductivity and mechanical strength for effortless and secure mounting. Moreover, integrated ESD protection enhances its ruggedness in challenging operating conditions. In summary, the IKW60N60H3FKSA1 represents a pinnacle of innovation in the realm of power MOSFET transistors, offering unmatched performance, efficiency, and reliability for the most demanding engineering and design challenges

Caratteristiche principali

  • High current handling for demanding loads
  • Low saturation voltage for reduced losses
  • Robust thermal performance for prolonged lifespan
  • Maintenance-free operation for reduced downtime

Applicazione

  • Powerful MOSFET for high-speed switching
  • Reliable choice for motor drives
  • Efficient power management solution

Specifiche

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productClassification ASP productStatusInfo active
hfgr K pbFree yes
moistureProtPack NON DRY orderingCode SP000919762
opn IKW60N60H3FKSA1 completelyPbFree yes
sapMatnrSali SP000919762

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AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..

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