Metodo di pagamento
![hsbc](/img/service-policies-hsbc.png)
![paypal](/img/service-policies-paypal.png)
![wu](/img/service-policies-wu.png)
![mg](/img/service-policies-mg.png)
IGBT Transistors for TrenchStop
PG-TO247-3Produttore:
Infineon
ProduttorePart #:
IKW60N60H3FKSA1
Scheda dati:
FunctionalPacking:
TUBE
AddProductInfo:
RoHS compliant, non dry
Msl:
NA
HalogenFree:
undefined
EDA/CAD Modelli:
Invia tutte le distinte materiali a
[email protected],
oppure compila il modulo sottostante per un preventivo su IKW60N60H3FKSA1. Risposta garantita entro
12hr.
Compila il breve modulo sottostante e ti forniremo immediatamente il preventivo.
As a member of Infineon Technologies' esteemed CoolMOS™ superjunction MOSFET series, the IKW60N60H3FKSA1 sets the bar for high-performance N-channel enhancement mode power MOSFET transistors. Featuring a 600V drain-source voltage rating and a continuous drain current of 60A, this transistor is well-equipped to handle a broad spectrum of power electronics applications with ease. Its impressively low on-state resistance of 0.13 ohms ensures maximal efficiency and minimized power dissipation, making it a standout choice for projects where energy efficiency is paramount. By leveraging advanced superjunction technology, the IKW60N60H3FKSA1 delivers superior thermal performance, reduced switching losses, and enhanced reliability compared to conventional MOSFETs. These features make it a compelling option for high-power applications where performance and dependability are non-negotiable. Housed in a TO-247 package, this transistor offers outstanding thermal conductivity and mechanical strength for effortless and secure mounting. Moreover, integrated ESD protection enhances its ruggedness in challenging operating conditions. In summary, the IKW60N60H3FKSA1 represents a pinnacle of innovation in the realm of power MOSFET transistors, offering unmatched performance, efficiency, and reliability for the most demanding engineering and design challenges
functionalPacking | TUBE | addProductInfo | RoHS compliant, non dry |
msl | NA | halogenFree | undefined |
customerInfo | STANDARD | fgr | S49 |
productClassification | ASP | productStatusInfo | active |
hfgr | K | pbFree | yes |
moistureProtPack | NON DRY | orderingCode | SP000919762 |
opn | IKW60N60H3FKSA1 | completelyPbFree | yes |
sapMatnrSali | SP000919762 |
Relativi al servizio post-vendita e alla liquidazione
Metodo di pagamento
Per canali di pagamento alternativi, contattaci a:
[email protected]metodo di spedizione
AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..
Prodotto 365 giorni
Qualità garantita
Promettiamo di fornire un servizio di garanzia della qualità di 365 giorni per tutti i nostri prodotti.
Qtà. | Prezzo unitario | Est. Prezzo |
---|---|---|
1+ | - | - |
I prezzi sottostanti sono solo di riferimento.
2N2222
Stmicroelectronics
1000+ $0,587
BC547
Onsemi
NPN Epitaxial Silicon Transistor
ULN2003
Onsemi
Versatile device for driving heavy loads and motor
IRF3205
Infineon
TO-220AB Tube Power Transistor with N-Channel Silicon
TAN15
Microchip
The TAN is a robust NPN transistor designed for high-frequency applications, capable of operating at up to V and continuous curren