Metodo di pagamento
2N4403G +BOM
PNP Bipolar Transistor, TO-92
TO-92-
Produttore:
-
ProduttorePart #:
2N4403G
-
Scheda dati:
-
Pbfree Code:
Yes
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Part Life Cycle Code:
Obsolete
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Pin Count:
3
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ECCN Code:
EAR99
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EDA/CAD Modelli:
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Disponibilità: 5537 PZ
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2N4403G Descrizione generale
From audio amplifiers to voltage regulators, the 2N4403G proves to be a versatile and reliable component that meets the demands of diverse applications. Its high-quality construction and consistent performance make it a trusted choice for professionals and hobbyists alike, offering peace of mind and exceptional functionality in every project
Caratteristiche principali
- Wide Temperature Range from -55°C to +150°C
- High-Gain Amplification with Low Noise Figure
- Pin-Count Optimized for Reduced Component Count
- Designed using Advanced Computer-Aided Design Tools
- Suitable for High-Speed Telecommunications Systems
- Frequency Selective Devices for Enhanced Performance
Specifiche
Source Content uid | 2N4403G | Pbfree Code | Yes |
Part Life Cycle Code | Obsolete | Pin Count | 3 |
Reach Compliance Code | ECCN Code | EAR99 | |
Collector Current-Max (IC) | 0.6 A | Collector-Emitter Voltage-Max | 40 V |
Configuration | SINGLE | DC Current Gain-Min (hFE) | 100 |
JEDEC-95 Code | TO-92 | JESD-30 Code | O-PBCY-T3 |
JESD-609 Code | e1 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Temperature-Max | 150 °C |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | PNP |
Power Dissipation-Max (Abs) | 1.5 W | Qualification Status | Not Qualified |
Surface Mount | NO | Terminal Finish | TIN SILVER COPPER |
Terminal Form | THROUGH-HOLE | Terminal Position | BOTTOM |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Transition Frequency-Nom (fT) | 200 MHz | Turn-off Time-Max (toff) | 255 ns |
Turn-on Time-Max (ton) | 35 ns | Product Category | Bipolar Transistors - BJT |
Mounting Style | Through Hole | Transistor Polarity | PNP |
Collector- Emitter Voltage VCEO Max | 40 V | Collector- Base Voltage VCBO | 40 V |
Emitter- Base Voltage VEBO | 5 V | Collector-Emitter Saturation Voltage | 750 mV |
Maximum DC Collector Current | 600 mA | Pd - Power Dissipation | 625 mW |
Gain Bandwidth Product fT | 200 MHz | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Continuous Collector Current | 600 mA |
DC Collector/Base Gain hfe Min | 30 | Height | 5.33 mm |
Length | 5.2 mm | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 5000 | Subcategory | Transistors |
Technology | Si | Width | 4.19 mm |
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