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Small Signal Field-Effect Transistor, 1.1A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
E-LineProduttore:
Diodes Incorporated
ProduttorePart #:
ZVN4306A
Scheda dati:
REACH:
Details
Technology:
Si
Mounting Style:
Through Hole
Transistor Polarity:
N-Channel
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Product ZVN4306A is a high-performance MOSFET transistor suitable for N-channel logic applications. With a continuous drain current of 1.1A and a drain-source voltage rating of 60V, this transistor offers reliable performance in various circuit designs. The on-resistance (Rds(on)) is measured at 450mOhm with a test voltage (Vgs) of 10V, ensuring efficient power management. The threshold voltage (Vgs Typ) is specified at 3V, making it compatible with a wide range of control signals
Product Category | MOSFET | REACH | Details |
Technology | Si | Mounting Style | Through Hole |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 1.1 A |
Rds On - Drain-Source Resistance | 450 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1.3 V | Qg - Gate Charge | - |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 850 mW | Channel Mode | Enhancement |
Series | ZVN4306 | Configuration | Single |
Fall Time | 16 ns | Forward Transconductance - Min | 700 mS |
Height | 4.01 mm | Length | 4.77 mm |
Product | MOSFET Small Signals | Product Type | MOSFET |
Rise Time | 25 ns | Factory Pack Quantity | 4000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | FET | Typical Turn-Off Delay Time | 30 ns |
Typical Turn-On Delay Time | 8 ns | Width | 2.41 mm |
Unit Weight | 0.016000 oz |
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Prodotto 365 giorni
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