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MOSFET, N-Channel Enhancement-Mode, 50V, 0.3 Ohm.
SOT-89Produttore:
ProduttorePart #:
VN3205N8-G
Scheda dati:
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
50 V
Current - Continuous Drain (Id) @ 25°C:
1.5A (Tj)
EDA/CAD Modelli:
Compila il breve modulo sottostante e ti forniremo immediatamente il preventivo.
The VN3205N8-G is an enhancement-mode transistor that stands out for its vertical DMOS structure and well-proven silicon-gate manufacturing process. These features give the transistor the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient inherent in MOS devices. One of the key advantages of this device is its freedom from thermal runaway and thermally induced secondary breakdown, a characteristic common to all MOS structures
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs | Series | - |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 50 V | Current - Continuous Drain (Id) @ 25°C | 1.5A (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 300mOhm @ 1.5A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 10mA | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V | FET Feature | - |
Power Dissipation (Max) | 1.6W (Ta) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Base Product Number | VN3205 |
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12 ore.
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Not as described on photos. No values on the box. You have to prepare it youself. Otherwise good product. Values on components. Contacted seller about this without result. With values on the box I would have given 5 stars.