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VN2460N3-G

MOSFET, N-Channel Enhancement-Mode, 600V, 20 Ohm.

Produttore:

Microchip Technology, Inc
ProduttorePart #:

VN2460N3-G
Scheda dati:

VN2460N3-G Scheda dati (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):

600 V
Current - Continuous Drain (Id) @ 25°C:

160mA (Tj)
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per VN2460N3-G

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VN2460N3-G Descrizione generale

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Caratteristiche principali

Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain

Microchip Technology, Inc Stock originale

Specifiche

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	-
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V	Current - Continuous Drain (Id) @ 25°C	160mA (Tj)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V	Rds On (Max) @ Id, Vgs	20Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id	4V @ 2mA	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	150 pF @ 25 V	FET Feature	-
Power Dissipation (Max)	1W (Ta)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Base Product Number	VN2460
Product Category	MOSFET	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V	Id - Continuous Drain Current	160 mA
Rds On - Drain-Source Resistance	20 Ohms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	1.5 V	Qg - Gate Charge	-
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	1 W	Channel Mode	Enhancement
Configuration	Single	Fall Time	20 ns
Height	5.33 mm	Length	5.21 mm
Product Type	MOSFET	Rise Time	10 ns
Factory Pack Quantity	1000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Type	FET
Typical Turn-Off Delay Time	25 ns	Typical Turn-On Delay Time	10 ns
Width	4.19 mm	Unit Weight	0.016000 oz

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