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TO-92 packaged N-type silicon MOSFET, capable of handling up to 60 volts and 0.31 amperes of current
TO-92Produttore:
ProduttorePart #:
VN10KN3-G
Scheda dati:
Technology:
Si
Mounting Style:
Through Hole
Number Of Channels:
1 Channel
Transistor Polarity:
N-Channel
EDA/CAD Modelli:
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Engineers can confidently utilize the VN10KN3-G transistor in a wide range of electronic systems, thanks to its robust design and innovative features. Whether used for switching or amplification tasks, this enhancement-mode device delivers consistent results and reliable operation. Its unique combination of attributes makes it a valuable asset in projects where efficiency and performance are paramount
Product Category: | MOSFET | Technology: | Si |
Mounting Style: | Through Hole | Number of Channels: | 1 Channel |
Transistor Polarity: | N-Channel | Vds - Drain-Source Breakdown Voltage: | 60 V |
Id - Continuous Drain Current: | 310 mA | Rds On - Drain-Source Resistance: | 5 Ohms |
Vgs th - Gate-Source Threshold Voltage: | 800 mV | Vgs - Gate-Source Voltage: | 10 V |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 1 W | Configuration: | Single |
Channel Mode: | Enhancement | Packaging: | Bulk |
Height: | 5.33 mm | Length: | 5.21 mm |
Transistor Type: | 1 N-Channel | Type: | FET |
Width: | 4.19 mm | Forward Transconductance - Min: | 100 mmho |
Product Type: | MOSFET | Factory Pack Quantity: | 1000 |
Subcategory: | MOSFETs | Unit Weight: | 0.007760 oz |
Tags | VN10KN3-G, VN10KN3, VN10KN, VN10K, VN10, VN1 | Product Category | MOSFET |
Technology | Si | Mounting Style | Through Hole |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 310 mA |
Rds On - Drain-Source Resistance | 5 Ohms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 800 mV | Qg - Gate Charge | - |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 1 W | Channel Mode | Enhancement |
Configuration | Single | Forward Transconductance - Min | 100 mmho |
Height | 5.33 mm | Length | 5.21 mm |
Product Type | MOSFET | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | FET | Width | 4.19 mm |
Unit Weight | 0.016000 oz |
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