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60V 115W 5@10A,4V 15A NPN TO-3 Bipolar Transistors - BJT ROHS
TO-3 -2Produttore:
Onsemi
ProduttorePart #:
2N3055
Scheda dati:
Mounting Style:
Through Hole
Transistor Polarity:
NPN
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
70 V
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The 2N3055 is a popular NPN power transistor, widely used in various applications due to its excellent safe operating area (SOA) and high current gain. It's designed for general-purpose amplification and switching circuits, making it suitable for audio, industrial control, and automotive systems. This transistor features a high DC current gain of 20-70, allowing it to handle high currents while maintaining a relatively low saturation voltage of 1.1V. Its SOA ensures reliable operation even under heavy load conditions. The 2N3055 is available in a TO-3 package and has Pb-free options for environmentally friendly applications. Its versatility, reliability, and ease of use make it a popular choice among engineers and hobbyists alike.
The 2N3055 features include:
These features make the 2N3055 a suitable component for various applications, including power amplifiers, motor control, and switching circuits.
According to the product information, the package type for the 2N3055 is TO-3.
The 2N3055 is a NPN power transistor with a TO-3 package, having three pins:
This transistor is commonly used in power amplifiers, motor control circuits, and other applications where high current and voltage are required.
The manufacturer of the 2N3055 is Microchip Technology.
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 70 V | Collector- Base Voltage VCBO | 100 V |
Emitter- Base Voltage VEBO | 7 V | Collector-Emitter Saturation Voltage | 1.1 V |
Pd - Power Dissipation | 117 W | Gain Bandwidth Product fT | 4 MHz |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 200 C |
Continuous Collector Current | 15 A | DC Collector/Base Gain hfe Min | 20 at 4 A, 4 V |
DC Current Gain hFE Max | 70 at 4 A, 4 V | Height | 11.43 mm |
Length | 39.94 mm | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 10 | Subcategory | Transistors |
Technology | Si | Width | 26.67 mm |
Package/Case | TO-3 -2 |
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Qtà. | Prezzo unitario | Est. Prezzo |
---|---|---|
1+ | $116,799 | $116,80 |
500+ | $43,612 | $21.806,00 |
1000+ | $42,827 | $42.827,00 |
200+ | $45,200 | $9.040,00 |
I prezzi sottostanti sono solo di riferimento.