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2N3055 +BOM

60V 115W 5@10A,4V 15A NPN TO-3 Bipolar Transistors - BJT ROHS

2N3055 Information

Description

The 2N3055 is a popular NPN power transistor, widely used in various applications due to its excellent safe operating area (SOA) and high current gain. It's designed for general-purpose amplification and switching circuits, making it suitable for audio, industrial control, and automotive systems. This transistor features a high DC current gain of 20-70, allowing it to handle high currents while maintaining a relatively low saturation voltage of 1.1V. Its SOA ensures reliable operation even under heavy load conditions. The 2N3055 is available in a TO-3 package and has Pb-free options for environmentally friendly applications. Its versatility, reliability, and ease of use make it a popular choice among engineers and hobbyists alike.

Features

The 2N3055 features include:

  • DC Current Gain - hFE = 20-70 @ IC = 4 Adc
  • Collector-Emitter Saturation Voltage - VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
  • Excellent Safe Operating Area
  • Pb-Free Packages are Available

These features make the 2N3055 a suitable component for various applications, including power amplifiers, motor control, and switching circuits.

Package

According to the product information, the package type for the 2N3055 is TO-3.

Pinout

The 2N3055 is a NPN power transistor with a TO-3 package, having three pins:

  • Base (B): Input pin for controlling the transistor's operation
  • Collector (C): Output pin that connects to the load or circuit being controlled
  • Emitter (E): Output pin that provides a reference point for the transistor's operation

This transistor is commonly used in power amplifiers, motor control circuits, and other applications where high current and voltage are required.

Manufacturer

The manufacturer of the 2N3055 is Microchip Technology.

Specifiche

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 70 V Collector- Base Voltage VCBO 100 V
Emitter- Base Voltage VEBO 7 V Collector-Emitter Saturation Voltage 1.1 V
Pd - Power Dissipation 117 W Gain Bandwidth Product fT 4 MHz
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 200 C
Continuous Collector Current 15 A DC Collector/Base Gain hfe Min 20 at 4 A, 4 V
DC Current Gain hFE Max 70 at 4 A, 4 V Height 11.43 mm
Length 39.94 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 10 Subcategory Transistors
Technology Si Width 26.67 mm
Package/Case TO-3 -2

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