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UJ3C120040K3S +BOM

N-JFET/N-MOSFET with Silicon Carbide technology, featuring unipolar operation and cascode configuration, capable of handling 1

Produttore:

Qorvo
ProduttorePart #:

UJ3C120040K3S
Scheda dati:

UJ3C120040K3S Scheda dati (PDF)
Technology:

SiC
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per UJ3C120040K3S

UJ3C120040K3S Descrizione generale

UnitedSiC's UJ3C120040K3S is a next-generation semiconductor device designed for high-speed switching applications in power electronics. Featuring a 1200V breakdown voltage, 40mOhm on-resistance, and a maximum continuous drain current of 40A, this JFET cascode device delivers unparalleled performance and reliability. With low gate charge and input capacitance, it enables fast switching speeds, leading to enhanced power conversion efficiency. Its application in motor drives, inverters, and power supplies underscores its reputation for seamless operation and superior energy efficiency. Housed in a TO-247 package, the UJ3C120040K3S offers excellent thermal performance and easy mounting on a heatsink, making it suitable for operation in harsh environments with a maximum junction temperature of 175°C

Caratteristiche principali

1. Miniaturized SMD Construction
2. 3000V Surge Capability
3. High Stability Characteristics

Applicazione

Top-tier medical displays
Innovative gaming consoles
Advanced aviation displays

Specifiche

Product Category	MOSFET	Technology	SiC
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	1.2 kV
Id - Continuous Drain Current	65 A	Rds On - Drain-Source Resistance	45 mOhms
Vgs - Gate-Source Voltage	- 25 V, + 25 V	Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	51 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	429 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Tradename	SiC FET	Series	UJ3C
Configuration	Single	Fall Time	20 ns
Product Type	MOSFET	Rise Time	20 ns
Factory Pack Quantity	600	Subcategory	MOSFETs
Typical Turn-Off Delay Time	63 ns	Typical Turn-On Delay Time	33 ns
Unit Weight	0.211644 oz

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