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NAND512W3A2CN6F +BOM

8 NAND512W3A2CN6F with 64Mx8 flash configuration and 35ns speed

Produttore:

Micron Technology
ProduttorePart #:

NAND512W3A2CN6F
Scheda dati:

NAND512W3A2CN6F Scheda dati (PDF)
Part Life Cycle Code:

Transferred
Pin Count:

48
Reach Compliance Code:

compliant
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per NAND512W3A2CN6F

NAND512W3A2CN6F Descrizione generale

SUMMARY DESCRIPTIONThe NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that usesthe Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.FEATURES SUMMARY■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area – Cost effective solutions for mass storage applications■ NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities■ SUPPLY VOLTAGE – 1.8V device: VDD = 1.7 to 1.95V – 3.0V device: VDD = 2.7 to 3.6V■ PAGE SIZE – x8 device: (512 + 16 spare) Bytes – x16 device: (256 + 8 spare) Words■ BLOCK SIZE – x8 device: (16K + 512 spare) Bytes – x16 device: (8K + 256 spare) Words■ PAGE READ / PROGRAM – Random access: 12µs (max) – Sequential access: 50ns (min) – Page program time: 200µs (typ)■ COPY BACK PROGRAM MODE – Fast page copy without external buffering■ FAST BLOCK ERASE – Block erase time: 2ms (Typ)■ STATUS REGISTER■ ELECTRONIC SIGNATURE■ CHIP ENABLE ‘DON’T CARE’ OPTION – Simple interface with microcontroller■ SERIAL NUMBER OPTION■ HARDWARE DATA PROTECTION – Program/Erase locked during Power transitions■ DATA INTEGRITY – 100,000 Program/Erase cycles – 10 years Data Retention■ RoHS COMPLIANCE – Lead-Free Components are Compliant with the RoHS Directive■ DEVELOPMENT TOOLS – Error Correction Code software and hardware models – Bad Blocks Management and Wear Leveling algorithms – File System OS Native reference software – Hardware simulation models

Specifiche

Source Content uid	NAND512W3A2CN6F	Part Life Cycle Code	Transferred
Pin Count	48	Reach Compliance Code	compliant
ECCN Code	EAR99	HTS Code	8542.32.00.51
Access Time-Max	12000 ns	Command User Interface	YES
Data Polling	NO	JESD-30 Code	R-PDSO-G48
JESD-609 Code	e3/e6	Length	18.4 mm
Memory Density	536870912 bit	Memory IC Type	FLASH
Memory Width	8	Number of Functions	1
Number of Sectors/Size	4K	Number of Terminals	48
Number of Words	67108864 words	Number of Words Code	64000000
Operating Mode	ASYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Organization	64MX8
Page Size	512 words	Parallel/Serial	PARALLEL
Peak Reflow Temperature (Cel)	260	Programming Voltage	3 V
Qualification Status	Not Qualified	Ready/Busy	YES
Seated Height-Max	1.2 mm	Sector Size	16K
Standby Current-Max	0.00005 A	Supply Current-Max	0.02 mA
Supply Voltage-Max (Vsup)	3.6 V	Supply Voltage-Min (Vsup)	2.7 V
Supply Voltage-Nom (Vsup)	3 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	INDUSTRIAL
Terminal Finish	TIN/TIN BISMUTH	Terminal Form	GULL WING
Terminal Pitch	0.5 mm	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Toggle Bit	NO
Type	SLC NAND TYPE	Width	12 mm

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