Questo sito web utilizza i cookie. Utilizzando questo sito, acconsenti all'utilizzo dei cookie. Per ulteriori informazioni, dai un'occhiata al nostro politica sulla riservatezza.

Le immagini servono solo come riferimento,

Vedi Specifiche Tecniche

NAND256W3A2BN6F +BOM

NAND Flash NAND 256 MEG

Produttore:

ST
ProduttorePart #:

NAND256W3A2BN6F
Scheda dati:

NAND256W3A2BN6F Scheda dati (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NAND
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per NAND256W3A2BN6F

NAND256W3A2BN6F Descrizione generale

The NAND256W3A2BN6F is a cutting-edge NAND flash memory chip that boasts a whopping storage capacity of 256 gigabits, making it the ideal choice for high-performance data storage in a variety of electronic devices. With its reliable design and lightning-fast data transfer rates, this chip is perfectly suited for use in smartphones, tablets, digital cameras, and solid-state drives, offering a cost-effective and energy-efficient solution for secure and efficient data storage. Operating on a supply voltage of 3.3V and utilizing a NAND interface for seamless communication with other devices, the NAND256W3A2BN6F is a versatile and compact solution with its wafer-level chip-scale package and 63 ball grid array (BGA) contacts. Whether you're looking to upgrade the storage capabilities of your smartphone or enhance the performance of your digital camera, this NAND flash memory chip is sure to deliver the reliability, speed, and efficiency you need

Caratteristiche principali

HIGH DENSITY NAND FLASH MEMORIES
– Up to 1 Gbit memory array
– Up to 32 Mbit spare area
– Cost effective solutions for mass storage applications
NAND INTERFACE
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
SUPPLY VOLTAGE
– 1.8V device: VDD = 1.7 to 1.95V
– 3.0V device: VDD = 2.7 to 3.6V
PAGE SIZE
– x8 device: (512 + 16 spare) Bytes
– x16 device: (256 + 8 spare) Words
BLOCK SIZE
– x8 device: (16K + 512 spare) Bytes
– x16 device: (8K + 256 spare) Words
PAGE READ / PROGRAM
– Random access: 12µs (max)
– Sequential access: 50ns (min)
– Page program time: 200µs (typ)
COPY BACK PROGRAM MODE
– Fast page copy without external buffering
FAST BLOCK ERASE
– Block erase time: 2ms (Typ)
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’ OPTION
– Simple interface with microcontroller
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
– Program/Erase locked during Power transitions
DATA INTEGRITY
– 100,000 Program/Erase cycles
– 10 years Data Retention
RoHS COMPLIANCE
– Lead-Free Components are Compliant with the RoHS Directive
DEVELOPMENT TOOLS
– Error Correction Code software and hardware models
– Bad Blocks Management and Wear Leveling algorithms
– File System OS Native reference software
– Hardware simulation models

Specifiche

Programmabe	Not Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NAND
Memory Size	256Mbit	Memory Organization	32M x 8
Memory Interface	Parallel	Clock Frequency	-
Write Cycle Time - Word, Page	50ns	Access Time	50 ns
Voltage - Supply	2.7V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount

Politiche di servizio e altro

Relativi al servizio post-vendita e alla liquidazione

Pagamento

Metodo di pagamento

TT/bonifico bancario

PayPal

Western Union

Grammo dei soldi

Per canali di pagamento alternativi, contattaci a:

[email protected]

Spedizione e imballaggio

metodo di spedizione

Fedex

UPS

DHL

NTN

Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..