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NAND256W3A2BN6E +BOM

With its high-speed performance and compact design

Produttore:

Micron Technology Inc.
ProduttorePart #:

NAND256W3A2BN6E
Scheda dati:

NAND256W3A2BN6E Scheda dati (PDF)
Pbfree Code:

Yes
Part Life Cycle Code:

Transferred
Pin Count:

48
ECCN Code:

EAR99
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per NAND256W3A2BN6E

NAND256W3A2BN6E Descrizione generale

The NAND256W3A2BN6E is a cutting-edge NAND flash memory chip designed for applications that demand high storage capacity and fast data access speeds. With a generous capacity of 256 gigabits (Gb), this chip is essential for modern electronics such as smartphones, tablets, and SSDs. The unique naming convention of "W3A2" hints at its specialized features or performance enhancements within the NAND flash memory lineup. Furthermore, the "BN6E" code likely signifies specific packaging or manufacturing attributes that ensure its reliability and compatibility with various devices

Caratteristiche principali

HIGH DENSITY NAND FLASH MEMORIES
– Up to 1 Gbit memory array
– Up to 32 Mbit spare area
– Cost effective solutions for mass storage applications
NAND INTERFACE
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
SUPPLY VOLTAGE
– 1.8V device: VDD = 1.7 to 1.95V
– 3.0V device: VDD = 2.7 to 3.6V
PAGE SIZE
– x8 device: (512 + 16 spare) Bytes
– x16 device: (256 + 8 spare) Words
BLOCK SIZE
– x8 device: (16K + 512 spare) Bytes
– x16 device: (8K + 256 spare) Words
PAGE READ / PROGRAM
– Random access: 12µs (max)
– Sequential access: 50ns (min)
– Page program time: 200µs (typ)
COPY BACK PROGRAM MODE
– Fast page copy without external buffering
FAST BLOCK ERASE
– Block erase time: 2ms (Typ)
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’ OPTION
– Simple interface with microcontroller
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
– Program/Erase locked during Power transitions
DATA INTEGRITY
– 100,000 Program/Erase cycles
– 10 years Data Retention
RoHS COMPLIANCE
– Lead-Free Components are Compliant with the RoHS Directive
DEVELOPMENT TOOLS
– Error Correction Code software and hardware models
– Bad Blocks Management and Wear Leveling algorithms
– File System OS Native reference software
– Hardware simulation models

Specifiche

Pbfree Code	Yes	Part Life Cycle Code	Transferred
Pin Count	48	Reach Compliance Code
ECCN Code	EAR99	HTS Code	8542.32.00.51
Access Time-Max	12000 ns	Command User Interface	YES
Data Polling	NO	JESD-30 Code	R-PDSO-G48
JESD-609 Code	e4	Length	18.4 mm
Memory Density	268435456 bit	Memory IC Type	FLASH
Memory Width	8	Number of Functions	1
Number of Sectors/Size	2K	Number of Terminals	48
Number of Words	33554432 words	Number of Words Code	32000000
Operating Mode	ASYNCHRONOUS	Operating Temperature-Max	85 °C
Operating Temperature-Min	-40 °C	Organization	32MX8
Page Size	512 words	Parallel/Serial	PARALLEL
Peak Reflow Temperature (Cel)	245	Programming Voltage	3 V
Qualification Status	Not Qualified	Ready/Busy	YES
Seated Height-Max	1.2 mm	Sector Size	16K
Standby Current-Max	0.00005 A	Supply Current-Max	0.02 mA
Supply Voltage-Max (Vsup)	3.6 V	Supply Voltage-Min (Vsup)	2.7 V
Supply Voltage-Nom (Vsup)	3 V	Surface Mount	YES
Technology	CMOS	Temperature Grade	INDUSTRIAL
Terminal Finish	NICKEL PALLADIUM GOLD	Terminal Form	GULL WING
Terminal Pitch	0.5 mm	Terminal Position	DUAL
Time@Peak Reflow Temperature-Max (s)	30	Toggle Bit	NO
Type	SLC NAND TYPE	Width	12 mm

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