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NAND01GW3B2CZA6E +BOM

128MX8 FLASH 3V PROM, 25000ns, PBGA63

Produttore:

Micron Technology Inc.
ProduttorePart #:

NAND01GW3B2CZA6E
Scheda dati:

NAND01GW3B2CZA6E Scheda dati (PDF)
Part Life Cycle Code:

Obsolete
Pin Count:

63
ECCN Code:

EAR99
HTS Code:

8542.32.00.51
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per NAND01GW3B2CZA6E

NAND01GW3B2CZA6E Descrizione generale

Micron Technology's NAND01GW3B2CZA6E NAND flash memory chip is designed to meet the demands of diverse applications, from solid-state drives (SSDs) and memory cards to USB flash drives and industrial embedded systems. Recognized for its reliability, high performance, and cost-effectiveness, this chip has solidified its position as the go-to choice for manufacturers seeking superior NAND flash memory solutions

Caratteristiche principali

HIGH DENSITY NAND FLASH MEMORIES
– Up to 1 Gbit memory array
– Up to 32 Mbit spare area
– Cost effective solutions for mass storage applications
NAND INTERFACE
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
SUPPLY VOLTAGE
– 1.8V device: VDD = 1.7 to 1.95V
– 3.0V device: VDD = 2.7 to 3.6V
PAGE SIZE
– x8 device: (512 + 16 spare) Bytes
– x16 device: (256 + 8 spare) Words
BLOCK SIZE
– x8 device: (16K + 512 spare) Bytes
– x16 device: (8K + 256 spare) Words
PAGE READ / PROGRAM
– Random access: 12µs (max)
– Sequential access: 50ns (min)
– Page program time: 200µs (typ)
COPY BACK PROGRAM MODE
– Fast page copy without external buffering
FAST BLOCK ERASE
– Block erase time: 2ms (Typ)
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’ OPTION
– Simple interface with microcontroller
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
– Program/Erase locked during Power transitions
DATA INTEGRITY
– 100,000 Program/Erase cycles
– 10 years Data Retention
RoHS COMPLIANCE
– Lead-Free Components are Compliant with the RoHS Directive
DEVELOPMENT TOOLS
– Error Correction Code software and hardware models
– Bad Blocks Management and Wear Leveling algorithms
– File System OS Native reference software
– Hardware simulation models

Specifiche

Part Life Cycle Code	Obsolete	Pin Count	63
Reach Compliance Code		ECCN Code	EAR99
HTS Code	8542.32.00.51	Access Time-Max	25000 ns
Command User Interface	YES	Data Polling	NO
JESD-30 Code	R-PBGA-B63	JESD-609 Code	e1
Length	11 mm	Memory Density	1073741824 bit
Memory IC Type	FLASH	Memory Width	8
Number of Functions	1	Number of Sectors/Size	1K
Number of Terminals	63	Number of Words	134217728 words
Number of Words Code	128000000	Operating Mode	ASYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min	-40 °C
Organization	128MX8	Page Size	2K words
Parallel/Serial	PARALLEL	Peak Reflow Temperature (Cel)	260
Programming Voltage	3 V	Qualification Status	Not Qualified
Ready/Busy	YES	Seated Height-Max	1.05 mm
Sector Size	128K	Standby Current-Max	0.00005 A
Supply Current-Max	0.03 mA	Supply Voltage-Max (Vsup)	3.6 V
Supply Voltage-Min (Vsup)	2.7 V	Supply Voltage-Nom (Vsup)	3 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	INDUSTRIAL	Terminal Finish	TIN SILVER COPPER
Terminal Form	BALL	Terminal Pitch	0.8 mm
Terminal Position	BOTTOM	Time@Peak Reflow Temperature-Max (s)	30
Toggle Bit	NO	Type	SLC NAND TYPE
Width	9 mm	Write Cycle Time-Max (tWC)	25 ms

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