Questo sito web utilizza i cookie. Utilizzando questo sito, acconsenti all'utilizzo dei cookie. Per ulteriori informazioni, dai un'occhiata al nostro politica sulla riservatezza.

Le immagini servono solo come riferimento,

Vedi Specifiche Tecniche

ISL9N310AD3 +BOM

Transistor N-channel 30V 35A 3-pin TO-251 Tube

Produttore:

onsemi
ProduttorePart #:

ISL9N310AD3
Scheda dati:

ISL9N310AD3 Scheda dati (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per ISL9N310AD3

ISL9N310AD3 Descrizione generale

With its cutting-edge specifications, the ISL9N310AD3 MOSFET surpasses expectations in performance and reliability for a wide range of applications. Boasting a voltage rating of 100V and a continuous drain current of 39A, this N-channel enhancement mode power MOSFET is the go-to choice for high-efficiency requirements in automotive, industrial, and consumer electronics sectors. Its low on-resistance of 22mΩ at a Vgs of 10V minimizes power losses, optimizing system efficiency, while the gate threshold voltage of 2V ensures easy compatibility with standard logic-level signals. The TO-252 package enhances thermal performance and facilitates PCB mounting, with a junction-to-ambient thermal resistance of 62°C/W ensuring safe operation under heavy loads. Moreover, its high pulsed drain current rating of 156A and avalanche energy rating of 1.32mJ provide added protection against voltage spikes and transient events

Specifiche

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	35 A	Rds On - Drain-Source Resistance	15 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	70 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	38 ns	Height	16.3 mm
Length	10.67 mm	Product Type	MOSFET
Rise Time	49 ns, 34 ns	Factory Pack Quantity	75
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	MOSFET	Typical Turn-Off Delay Time	38 ns, 63 ns
Typical Turn-On Delay Time	11 ns, 6 ns	Width	4.7 mm
Unit Weight	0.068784 oz	Series	UltraFET®
FET Type	N-Channel	Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	35A (Tc)	Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	10Ohm @ 35A, 10A	Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	48 nC @ 10 V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1800 pF @ 15 V	Power Dissipation (Max)	70W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole

Politiche di servizio e altro

Relativi al servizio post-vendita e alla liquidazione

Pagamento

Metodo di pagamento

TT/bonifico bancario

PayPal

Western Union

Grammo dei soldi

Per canali di pagamento alternativi, contattaci a:

[email protected]

Spedizione e imballaggio

metodo di spedizione

Fedex

UPS

DHL

NTN

Imballaggio

AVAQ determina e confeziona tutti i dispositivi in base ai requisiti di protezione contro le scariche elettrostatiche (ESD) e il livello di sensibilità all'umidità (MSL)..