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HEXFET POWER MOSFET Small Signal Field-Effect Transistor, P-Channel, TO-236AB package, with a maximum drain current of 0
Micro3™/SOT-23Produttore:
ProduttorePart #:
IRLML6302TR
Scheda dati:
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
780mA (Ta)
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Infineon Technologies' IRLML6302TR is not your average small signal MOSFET transistor. Tailored for low power applications, this remarkable component from the HEXFET power MOSFET family stands out with its incredibly low on-resistance of 0.055 ohms and a maximum continuous drain current of 4.3A. These features make it a prime choice for applications that demand high efficiency and minimal power dissipation. Furthermore, its compact SOT-23 package ensures that it can be seamlessly integrated into small and space-constrained electronic circuits. With a gate threshold voltage ranging from 0.55V to 1.5V and a low gate charge of 3.5nC, the IRLML6302TR enables swift switching speeds and efficacious power management, positioning itself as the go-to solution for battery-powered devices, portable electronics, and low voltage DC-DC converters due to its exceptional performance and low power consumption. Additionally, its versatility is evident as it finds applications in load switches, power management circuits, and motor control circuits, proving its reliability and indispensability in the world of electronics
FET Type | P-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20 V | Current - Continuous Drain (Id) @ 25°C | 780mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - | Rds On (Max) @ Id, Vgs | 600mOhm @ 610mA, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 3.6 nC @ 4.45 V |
Vgs (Max) | - | Input Capacitance (Ciss) (Max) @ Vds | 97 pF @ 15 V |
FET Feature | - | Power Dissipation (Max) | - |
Operating Temperature | - | Mounting Type | Surface Mount |
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Prodotto 365 giorni
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