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IRL520NPBF +BOM

N-Channel MOSFET transistor with a voltage rating of 100V and a current rating of 10A in TO-220AB package

Produttore:

Infineon Technologies Corporation
ProduttorePart #:

IRL520NPBF
Scheda dati:

IRL520NPBF Scheda dati (PDF)
Series:

HEXFET®
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IRL520NPBF

IRL520NPBF Descrizione generale

The IRL520NPBF Power MOSFET transistor is a versatile and efficient component suitable for a wide range of industries. With its low on-resistance, high power handling capabilities, and fast switching speed, it is a reliable choice for automotive, industrial, and consumer electronics applications. Its low input capacitance and high input impedance enable effective interfacing with microcontrollers and other control devices, making it an ideal choice for applications requiring precision and quick response times. Additionally, its TO-220 package and RoHS compliance make it easy to integrate into various circuits while ensuring environmental friendliness

Caratteristiche principali

Planar cell structure for wide SOA
Optimized for broadest availability from distribution partners
Product qualification according to JEDEC standard
Silicon optimized for applications switching below <100kHz
Industry standard through-hole power package
High-current rating
Increased ruggedness
Wide availability from distribution partners
Industry standard qualification
High performance in low frequency applications
Standard pin-out allows for drop-in replacement
High current capability

Specifiche

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	HEXFET®
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V	Rds On (Max) @ Id, Vgs	180mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	20 nC @ 5 V
Vgs (Max)	±16V	Input Capacitance (Ciss) (Max) @ Vds	440 pF @ 25 V
FET Feature	-	Power Dissipation (Max)	48W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	IRL520	RHoS	yes
PBFree	yes	HalogenFree	yes
Product Category	MOSFET	Mounting Style	Through Hole
Transistor Polarity	N-Channel	Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	100 V	Id - Continuous Drain Current	10 A
Rds On - Drain-Source Resistance	180 mOhms	Vgs - Gate-Source Voltage	- 16 V, + 16 V
Vgs th - Gate-Source Threshold Voltage	1.8 V	Qg - Gate Charge	13.3 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	48 W	Channel Mode	Enhancement
Configuration	Single	Height	15.65 mm
Length	10 mm	Product Type	MOSFET
Factory Pack Quantity	1000	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Width	4.4 mm
Unit Weight	0.068784 oz

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