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MOSFET transistor with P-Channel configuration, rated for -100V and -6.5A, featuring a low on-resistance of 480mOhm and total gate charge of 18nC
TO-251-3Produttore:
ProduttorePart #:
IRFU9120NPBF
Scheda dati:
Part Life Cycle Code:
Obsolete
Reach Compliance Code:
not_compliant
ECCN Code:
EAR99
Additional Feature:
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
EDA/CAD Modelli:
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Meet your power transistor needs with the efficient and dependable IRFU9120NPBF. This 1-Element P-Channel FET combines high-current and voltage capabilities with low on-resistance of 0.48ohm for optimal power handling performance. The Silicon metal-oxide semiconductor construction ensures stability and reliability in various industrial applications. Housed in a TO-251AA package, this FET offers easy installation and thermal management for seamless integration into your circuits. Choose the IRFU9120NPBF for a lead-free and sustainable power transistor solution that delivers consistent results
Source Content uid | IRFU9120NPBF | Part Life Cycle Code | Obsolete |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | Avalanche Energy Rating (Eas) | 100 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 100 V | Drain Current-Max (ID) | 6.6 A |
Drain-source On Resistance-Max | 0.48 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-251AA | JESD-30 Code | R-PSIP-T3 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | P-CHANNEL |
Power Dissipation-Max (Abs) | 39 W | Pulsed Drain Current-Max (IDM) | 26 A |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Finish | MATTE TIN OVER NICKEL | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
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Prodotto 365 giorni
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