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IRFR5410TRPBF +BOM

This is a P-Channel Power MOSFET designated as IRFR5410TRPBF

Produttore:

INFINEON
ProduttorePart #:

IRFR5410TRPBF
Scheda dati:

IRFR5410TRPBF Scheda dati (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Factory Lead Time:

52 Weeks
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IRFR5410TRPBF

IRFR5410TRPBF Descrizione generale

Designed for high-performance applications, the Infineon IRFR5410TRPBF is a P Channel power MOSFET featuring a Drain Source Voltage Vds of 100V and a Continuous Drain Current Id of 13A. Its Surface Mount mounting style simplifies installation, while the Rds(On) Test Voltage of 10V ensures efficient power transfer. The Gate Source Threshold Voltage Max of 4V provides precise control over switching characteristics, making it well-suited for power management circuits. With a Power Dissipation rating of 66W, this MOSFET can reliably operate under demanding conditions. Moreover, its RoHS compliance guarantees compliance with environmental standards, reinforcing its suitability for environmentally conscious applications

Caratteristiche principali

Advanced signal processing
Compact design footprint
Low noise emission

Applicazione

Efficient power supply switching
Robust motor control
Portable electronics switches

Specifiche

Source Content uid	IRFR5410TRPBF	Part Life Cycle Code	Active
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	52 Weeks	Additional Feature	HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas)	194 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	13 A	Drain-source On Resistance-Max	0.205 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252AA
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Operating Temperature-Min	-55 °C
Peak Reflow Temperature (Cel)	260	Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	66 W	Pulsed Drain Current-Max (IDM)	52 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN OVER NICKEL	Terminal Form	GULL WING
Terminal Position	SINGLE	Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING	Transistor Element Material	SILICON

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Garanzia

Prodotto 365 giorni

Qualità garantita

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Valutazioni e recensioni

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