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IRFR540ZTRPBF +BOM

Specifications: The IRFR540ZTRPBF is a MOSFET with N-channel configuration

Produttore:

INFINEON
ProduttorePart #:

IRFR540ZTRPBF
Scheda dati:

IRFR540ZTRPBF Scheda dati (PDF)
Part Life Cycle Code:

Active
Reach Compliance Code:

not_compliant
ECCN Code:

EAR99
Factory Lead Time:

65 Weeks
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IRFR540ZTRPBF

IRFR540ZTRPBF Descrizione generale

Whether you need a MOSFET for N channel applications with a continuous drain current of 35A and a drain source voltage of 100V, the IRFR540ZTRPBF is the ideal choice. With an on resistance of 0.0225ohm at a test voltage of 10V, this MOSFET delivers exceptional performance and efficiency. Its TO-252AA transistor case style and 3 pins allow for easy integration into your circuit designs. With a maximum operating temperature of 175°C and a power dissipation of 91W, this MOSFET is designed to operate reliably in demanding conditions. As part of the HEXFET Series, it meets automotive qualification standards and is suitable for automotive applications. Furthermore, it has an MSL rating of MSL 1 - Unlimited and is free from SVHC (Substances of Very High Concern), making it a safe and environmentally friendly choice for your electronic projects

Caratteristiche principali

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Applicazione

SWITCHING

Specifiche

Source Content uid	IRFR540ZTRPBF	Part Life Cycle Code	Active
Reach Compliance Code	not_compliant	ECCN Code	EAR99
Factory Lead Time	65 Weeks	Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas)	39 mJ	Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	DS Breakdown Voltage-Min	100 V
Drain Current-Max (ID)	35 A	Drain-source On Resistance-Max	0.0285 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	JEDEC-95 Code	TO-252AA
JESD-30 Code	R-PSSO-G2	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	1
Number of Terminals	2	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	91 W
Pulsed Drain Current-Max (IDM)	140 A	Qualification Status	Not Qualified
Surface Mount	YES	Terminal Finish	MATTE TIN OVER NICKEL
Terminal Form	GULL WING	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30	Transistor Application	SWITCHING
Transistor Element Material	SILICON	Series	HEXFET®
FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	28.5mOhm @ 21A, 10V
Vgs(th) (Max) @ Id	4V @ 50µA	Gate Charge (Qg) (Max) @ Vgs	59 nC @ 10 V
Vgs (Max)	±20V	Input Capacitance (Ciss) (Max) @ Vds	1690 pF @ 25 V
Power Dissipation (Max)	91W (Tc)	Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount	Base Product Number	IRFR540

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