Metodo di pagamento
IRFR48ZPBF +BOM
MOSFET 55V 1 N-CH HEXFET 11mOhms 40nC
TO-252-3-
Produttore:
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ProduttorePart #:
IRFR48ZPBF
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Scheda dati:
-
Part Life Cycle Code:
Obsolete
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Reach Compliance Code:
not_compliant
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ECCN Code:
EAR99
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Additional Feature:
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
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EDA/CAD Modelli:
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IRFR48ZPBF Descrizione generale
Whether used in power supply units, motor control circuits, or automotive electronics, the IRFR48ZPBF delivers consistent and stable performance. With its advanced design and high-quality materials, this transistor is a dependable choice for demanding applications requiring efficient power management
Caratteristiche principali
- Advanced Process Technology
- Ultra Low On-Resistance
- 175°C Operating Temperature
- Fast Switching
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free
Specifiche
Source Content uid | IRFR48ZPBF | Part Life Cycle Code | Obsolete |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Avalanche Energy Rating (Eas) | 74 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 55 V | Drain Current-Max (ID) | 42 A |
Drain-source On Resistance-Max | 0.011 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-252AA | JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 175 °C |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 91 W | Pulsed Drain Current-Max (IDM) | 250 A |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | MATTE TIN OVER NICKEL | Terminal Form | GULL WING |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Product Category | MOSFET | REACH | Details |
Technology | Si | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 55 V | Id - Continuous Drain Current | 62 A |
Rds On - Drain-Source Resistance | 11 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 4 V | Qg - Gate Charge | 40 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 175 C |
Pd - Power Dissipation | 91 W | Channel Mode | Enhancement |
Fall Time | 35 ns | Forward Transconductance - Min | 120 S |
Height | 2.3 mm | Length | 6.5 mm |
Product Type | MOSFET | Rise Time | 61 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | Automotive MOSFET |
Typical Turn-Off Delay Time | 40 ns | Typical Turn-On Delay Time | 15 ns |
Width | 6.22 mm | Part # Aliases | SP001564992 |
Unit Weight | 0.011640 oz |
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