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IRF7907PBF +BOM

Dual N-channel 30V MOSFET Transistor

Produttore:

INFINEON
ProduttorePart #:

IRF7907PBF
Scheda dati:

IRF7907PBF Scheda dati (PDF)
Part Life Cycle Code:

Obsolete
Reach Compliance Code:

compliant
ECCN Code:

EAR99
Avalanche Energy Rating (Eas):

15 mJ
EDA/CAD Modelli:

Richiedi modelli CAD gratuiti per IRF7907PBF

IRF7907PBF Descrizione generale

With its cutting-edge features, such as a low on-resistance of 0.014 ohms, maximum drain-source voltage of 30V, and continuous drain current of 26A, the IRF7907PBF is engineered to deliver superior performance in various electronic applications. Its TO-220 package ensures efficient heat dissipation and easy mounting, while its wide junction temperature range and fast switching speed make it a reliable choice for demanding operating conditions. This power MOSFET transistor is the perfect solution for power electronics applications that demand high efficiency and reliability, from power supplies to motor control and automotive systems. Trust the IRF7907PBF to deliver exceptional performance and reliability in your electronic designs

Specifiche

Source Content uid	IRF7907PBF	Part Life Cycle Code	Obsolete
Reach Compliance Code	compliant	ECCN Code	EAR99
Avalanche Energy Rating (Eas)	15 mJ	Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	30 V	Drain Current-Max (ID)	11 A
Drain-source On Resistance-Max	0.0118 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 Code	R-PDSO-G8	JESD-609 Code	e3
Moisture Sensitivity Level	1	Number of Elements	2
Number of Terminals	8	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150 °C	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	2 W	Pulsed Drain Current-Max (IDM)	85 A
Qualification Status	Not Qualified	Surface Mount	YES
Terminal Finish	MATTE TIN	Terminal Form	GULL WING
Terminal Position	DUAL	Transistor Element Material	SILICON

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